Impact of Inhomogeneous Magnetic Fields on Polymer Deposition in Low-Pressure Capacitively Coupled Ar/C4F8 Plasma

被引：0

作者：

Kim, Jihoon ^{[1
]}

Han, Jonggu ^{[1
]}

Park, Woojin ^{[1
]}

Park, Sang Jun ^{[1
]}

Baek, Song Yi ^{[2
]}

Yoo, Byeongsun ^{[2
]}

Choi, Chulhwan ^{[2
]}

Moon, Se Youn ^{[1
,3
,4
]}

机构：

[1] Jeonbuk Natl Univ, Dept Appl Plasma & Quantum Beam Engn, Jeonju Si, Jeonbuk Do, South Korea

[2] Samsung Elect Co Ltd, Memory CVD Technol Team, Hwaseong Si 445701, Gyeonggi Do, South Korea

[3] Jeonbuk Natl Univ, Dept Quantum Syst Engn, Jeonju Si 54896, Jeonbuk Do, South Korea

[4] Jeonbuk Natl Univ, High Enthalpy Plasma Res Ctr, Jeonju Si, Jeonbuk Do, South Korea

来源：

PLASMA PROCESSES AND POLYMERS | 2024年

关键词：

C4F8 plasma processing; magnetized capacitively coupled plasma; optical emission spectroscopy; plasma polymerization; surface analysis; ACTINOMETRY; C2F6; CF;

D O I：

10.1002/ppap.202400259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetized plasmas are widely utilized in semiconductor fabrication due to their high processing efficiency. However, comprehensive studies involved in thin film formation-particularly the influence of magnetic fields on elemental reactions-remain limited. Additionally, using CxFy gases for plasma processing presents challenges in understanding the behavior of magnetized plasma. Thus, the effects of inhomogeneous magnetic fields on polymer deposition in low-pressure, magnetized Ar/C4F8 plasma were investigated through spatially resolved diagnostics. Introducing inhomogeneous magnetic fields led to notable localized changes, increasing ion, CF2, and F densities by factors of 2.29, 1.44, and 1.71 times, respectively. These variations resulted in thinner films with lower carbon-to-fluorine ratios. The findings highlight the potential of asymmetric plasma parameter control to modulate film properties locally.

引用

页数：9

共 50 条

[1] Plasma-chamber wall interaction and its impact on polymer deposition in inductively-coupled C4F8/Ar plasmas
Park, Woojin
Han, Jonggu
Park, Sangjun
Park, Solee
Kim, Jongsik
Moon, Se Youn
SURFACES AND INTERFACES, 2024, 54
[2] Photodetachment study of capacitively-coupled RF C4F8 plasma
Kono, Akihiro
Ohya, Yoshinobu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (3 A): : 1365 - 1368
[3] Photodetachment study of capacitively-coupled RF C4F8 plasma
Kono, A
Ohya, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1365 - 1368
[4] Irregular film thickness distribution in C4F8 inductively coupled plasma polymer deposition
Volland, Burkhard E.
Hauguth, Maik
Ishchuk, Valentyn
Rangelow, Ivo W.
Goodyear, Andrew L.
MICROELECTRONIC ENGINEERING, 2012, 98 : 524 - 527
[5] Modeling of magnetically enhanced capacitively coupled plasma sources:: Ar/C4F8/O2 discharges
Vasenkov, AV
Kushner, MJ
JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) : 834 - 845
[6] Characterization of SiO2 Over Poly-Si Mask Etching in Ar/C4F8 Capacitively Coupled Plasma
Seong, In Ho
Lee, Jang Jae
Cho, Chul Hee
Lee, Yeong Seok
Kim, Si Jun
You, Shin Jae
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2021, 30 (06): : 176 - 182
[7] C4F8 dissociation in an inductively coupled plasma
Radtke, MT
Coburn, JW
Graves, DB
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1038 - 1047
[8] Parameters measurement of ECR C4F8/Ar plasma
Shindo, M
Hiejima, S
Ueda, Y
Kawakami, S
Ishii, N
Kawai, Y
THIN SOLID FILMS, 1999, 345 (01) : 130 - 133
[9] Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma
徐轶君
吴雪梅
叶超
Plasma Science and Technology, 2013, 15 (10) : 1066 - 1070
[10] Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma
Xu Yijun
Wu Xuemei
Ye Chao
PLASMA SCIENCE & TECHNOLOGY, 2013, 15 (10) : 1066 - 1070

← 1 2 3 4 5 →