High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes

被引：0

作者：

Zhao, Haiquan ^{[1
]}

Chen, Feiliang ^{[1
]}

Sun, Lixin ^{[1
]}

Tang, Wanying ^{[1
]}

Fan, Wei ^{[1
]}

Huang, Ruihan ^{[1
]}

Wang, Xiangdong ^{[1
]}

Li, Mo ^{[1
]}

Zhang, Jian ^{[1
]}

机构：

[1] Univ Elect & Sci Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2025年 / 46卷 / 02期

关键词：

Cathodes; Fabrication; Performance evaluation; Voltage; Anodes; Nanoscale devices; Gold; Lithography; Electric fields; Vacuum electronics; Nanoscale air channel devices; oblique deposition; heterogeneous electrodes; high output current; high rectification ratio;

D O I：

10.1109/LED.2024.3520300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we address the design and fabrication challenges typically encountered with planar nanoscale air channel diodes (NACDs) by introducing oblique deposition techniques, achieving the first-reported wafer-level planar NACDs with heterogeneous electrodes. By leveraging the work function difference from the heterogeneous electrodes and controlling the cathode-anode height difference as well as tilt angles, we provide a fresh perspective on device design. This approach results in a record output current of 2 mA at 5V for planar NACDs, an ultra-low turn-on voltage of 0.56 V as well as a high rectification ratio exceeding $10<^>{{4}}$ . This research offers a novel approach for realizing planar NACDs and paves the way for their integration into low-power, high-speed, high-frequency electronic applications.

引用

页码：306 / 309

页数：4