Numerical and experimental investigation of oxygen transport in 300 mm Czochralski silicon crystal growth with transverse magnetic fields

High-resistivity silicon substrates, commonly utilized in Radio Frequency Silicon on Insulator (RF-SOI) and Insulate-Gate Bipolar Transistor (IGBT) applications, typically require oxygen content below 2.5E+17 cm -3 to ensure resistivity stability. Achieving such low oxygen levels in Czochralski-grown silicon crystals remains challenging due to the use of quartz crucibles. In the quest for potential methods to grow ultra-low oxygen crystals, this study systematically revisited the impact of SR and CR on oxygen transport. Initially, an overview of the melt flow state at SR = 0 and CR = 0 is provided. Subsequently, the influence of varying SR values on oxygen concentration at CR = 0 is analyzed, with a novel finding that reducing SR can significantly lower oxygen concentration to below 2.5E17 cm -3 , as confirmed by both experimentation and simulation. The impact of various CR values at SR = 0 is then analyzed, with results indicating an increase in oxygen concentration with rising CR, consistent with previous reports. Finally, numerous computational cases were conducted to explore the combined effects of SR and CR. The following new conclusions were drawn: It is not feasible to achieve both low oxygen concentration and high radial oxygen uniformity in crystals simultaneously; The level of oxygen concentration is more dependent on melt flow rather than crucible temperature. These findings are of significant guidance for the growth of large-sized, industrial-grade high-resistivity silicon crystals.