Innovating Semiconductor Packaging: Dynamic Finite Element Models and Steady-State Warpage Simulations

被引:0
|
作者
Wu, Mei-Ling [1 ]
Wong, Wei-Jhih [1 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung, Taiwan
关键词
Semiconductor device modeling; Residual stresses; Mathematical models; Predictive models; Analytical models; Packaging; Force; Dynamic simulation; fan-out wafer-level packaging (FOWLP); finite element analysis; stress residual; wafer backside grinding process; SILICON-WAFERS; GRINDING FORCE; DEPTH; FILMS; CUT;
D O I
10.1109/TCPMT.2024.3454639
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study uses dynamic finite element models and steady-state simulations to address residual stress and wafer warpage in semiconductor packaging. Calibrated with empirical data, these models accurately predict the impact of backside grinding on wafer integrity. This approach analyzes stress trends and improves predictive accuracy through simulations. The study compares conventional and reverse grinding, optimizing directionality and filling a critical research gap. The relationship between grinding forces and wafer deformation is clarified through theoretical models, explaining force application and its impact on stress distribution. Alignment between theoretical predictions and simulations validates the model, providing a framework for warpage mitigation and enhanced wafer processing. A dynamic simulation evaluates damage and residual stresses on the wafer surface during grinding. Simulation-derived stresses are converted into wafer deformations using a steady-state warpage model, quantifying postgrinding warpage. Experimental data validate the model's accuracy, maintaining an error margin within 5%. These models could transform back grinding practices and improve wafer reliability in semiconductor manufacturing.
引用
收藏
页码:150 / 156
页数:7
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