High-performance solar-blind UV bipolar junction phototransistor based on a vertical Pt/Ga2O3/p-Si Schottky emitter structure

被引：5

作者：

Yang, Jialin ^{[1
,2
]}

Liu, Kewei ^{[1
,2
,3
]}

Zhu, Yongxue ^{[1
,2
]}

Chen, Xing ^{[1
,2
,3
]}

Cheng, Zhen ^{[1
,2
]}

Li, Binghui ^{[1
,2
,3
]}

Liu, Lei ^{[1
,2
,3
]}

Shen, Dezhen ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Key Lab Luminescence Sci & Technol, 3888 Dongnanhu Rd, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dongnanhu Rd, Changchun 130033, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 1008卷

基金：

中国国家自然科学基金;

关键词：

Ga2O3; Solar-blind UV photodetectors; Wide bandgap semiconductors; Phototransistors; PHOTODETECTOR; HETEROJUNCTION;

D O I：

10.1016/j.jallcom.2024.176668

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Solar-blind UV photodetectors are extensively applied in both military and civilian domains. In this work, a high-performance Pt/Ga2O3/p-Si Schottky emitter solar-blind UV bipolar junction phototransistor is demonstrated. It exhibits a peak responsivity (@246 nm) of 1632.8 A/W under a bias of 5 V. This responsivity is significantly enhanced compared to the Al/Ga2O3/p-Si heterojunction photodetector, while its response speed remains largely unchanged. Additionally, the device demonstrates excellent solar-blind UV spectral selectivity, with a solar-blind UV to visible-blind UV rejection ratio (R-246 nm/R-365 nm) reaching 2.4x10(4). This work provides new insights into the design and fabrication of high-performance Ga2O3-based solar-blind UV photodetectors.

引用

页数：7

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