Van der Waals epitaxy GaN on fluorophlogopite mica for transfer-free flexible UV photodetector

被引：0

作者：

Geng, Yingzhao ^{[1
]}

Xu, Yang ^{[1
]}

Li, Ruiming ^{[1
]}

Li, Xu ^{[1
]}

Wang, Xiao ^{[2
]}

Lin, Qianqian ^{[1
]}

Wu, Hao ^{[1
,4
,5
]}

Liu, Chang ^{[1
,3
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China

[2] Jiangnan Univ, Engn Res Ctr Internet Things Technol Applicat, Sch Internet Things Engn, Dept Elect Engn,Minist Educ, Wuxi 214122, Peoples R China

[3] Micius Lab, Zhengzhou 450046, Peoples R China

[4] Wuhan Univ, Hubei Key Lab Nucl Solid Phys, Wuhan 430072, Peoples R China

[5] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

来源：

MATERIALS LETTERS | 2025年 / 385卷

关键词：

Epitaxial growth; Thin films; Sensors;

D O I：

10.1016/j.matlet.2025.138185

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN thin films have been deposited on flexible and high-temperature-resistant fluorophlogopite mica (F-mica) substrates by molecular beam epitaxy. The in-plane epitaxial relationship between GaN and F-mica has been proved to be GaN[11-20]//F-mica[010]. Subsequently, graphene was transferred onto the GaN thin films to serve as a transparent electrode for the fabrication of ultraviolet detectors, and 0.3 A/W responsivity was measured at -1 V under 365 nm ultraviolet illumination with an intensity of 0.1 mW/cm2. Meanwhile, after multiple bending cycles, the crystalline structure of GaN and the photocurrents of the devices remained stable.

引用

页数：5