W-Band Substrate Integrated Waveguide IPD Bandpass Filters Using Through Glass via Technology

被引:0
|
作者
Yu, Tian [1 ]
Chen, Xin [2 ]
Wang, Manyu [2 ]
Lin, Jing-Yu [2 ]
Yu, Daquan [2 ]
机构
[1] Jiangnan Univ, Sch Integrated Circuits, Wuxi 214122, Peoples R China
[2] Xiamen Univ, Sch Elect Sci & Technol, Xiamen 361000, Peoples R China
基金
中国国家自然科学基金;
关键词
Glass; Filters; Substrates; Electrochemical deposition; Copper; Metallization; Band-pass filters; Radio frequency; Resonant frequency; Insertion loss; Bandpass filter (BPF); box-like topology; on-chip filter; substrate integrated waveguide (SIW); through glass via (TGV);
D O I
10.1109/TMTT.2025.3531370
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article proposes a series of glass-based substrate integrated waveguide (SIW) filters featured with high selectivity, low loss, and small size for W-band communication systems. The through glass via (TGV) process is detailed explored for integrated passive device (IPD) SIW structure implementation. To achieve the sharp roll-off, a novel SIW doublet with two poles and two transmission zeros (TZs) is realized by using both TE202 and TE401 modes as resonant modes in a single TGV-based SIW cavity. Based on this, an improved diagonal coupled box-like fourth-order topology is innovatively introduced, and a fourth-order SIW filter with quasi-elliptic function response is realized. To further miniaturize the circuit size of the doublet, an alternative approach is presented using dual-mode SIW resonator based on the TE101 and TE201 modes with perturbed metallization vias. This leads to form a doublet with a TZ in the upper stopband, and the parameter sensitivity analysis of the resonator is also conducted. Finally, two W-band fourth-order TGV-based IPD filters are designed, manufactured, and tested. The measured insertion losses of the on-wafer filters are 1.62 and 1.28 dB, respectively.
引用
收藏
页数:12
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