Electrophoretic Deposition of Conformal β-Ga2O3 Films on Arbitrary Substrates for Heterojunction-Based Deep-Ultraviolet Photodetectors

被引：2
作者：
Nair, Arathy Sreekala [1 ]
Manilal, Athulkrishna [1 ]
Sharaf, Afsal [1 ]
Thoutam, Laxman Raju [1 ]
机构：
[1] Amrita Vishwa Vidyapeetham, Amrita Sch Nanosci & Mol Med, Kochi 682041, Kerala, India
来源：
ACS APPLIED OPTICAL MATERIALS | 2024年 / 2卷 / 08期
关键词：
wide bandgap semiconductor; electrophoretic deposition; conformal deposition; flexible substrate; deep-UVphotodetector; SOLAR-BLIND PHOTODETECTOR; THIN-FILMS; UV PHOTODETECTOR; GA2O3; FILMS; PERFORMANCE; GROWTH; PAIR;
D O I：
10.1021/acsaom.4c00210
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ultrawide bandgap semiconductor beta-Ga2O3 has huge potential for the design of deep-ultraviolet (UV) photodetectors and nanoscale high-power electronic applications. The present study for the first time demonstrates the deposition of dense beta-Ga2O3 films on arbitrary substrates (rigid vs flexible, conducting vs insulating) using a simple and cost-effective electrophoretic deposition (EPD) process. Structural characterization of the as-deposited beta-Ga2O3 films on transparent fluorine-doped tin oxide (FTO), technologically feasible silicon, flexible metallic-aluminum foil, and indium tin oxide-coated polyethylene terephthalate (ITO-PET) substrates shows polycrystalline behavior and reveals the formation of isotype and metal-semiconductor-metal heterojunctions. EPD on a patterned aluminum microgrid array on an insulating glass substrate reveals conformal deposition. The as-deposited beta-Ga2O3 films reveal low dark currents of less than 12 nA on all the substrates, with photo-to-dark current ratio (PDCR) values of 7.08, 2.08, and 4.51 for FTO, silicon, and flexible aluminum foil, respectively, upon UV lamp exposure. The simple cost-effective one-step EPD process with an extremely fast deposition rate of approximately 1.5 mu m/min offers a high-throughput method for large-scale synthesis of conformal polycrystalline beta-Ga2O3 films on arbitrary substrates in any geometry for the creation of isotype and other heterojunction-based deep-UV photodetector applications.
引用
收藏
页码：1580 / 1590
页数：11
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