Electrical Characterization of Non-volatile Mott Transition in Mist CVD Deposited NiO Thin Films for CeRAM Applications

被引：0

作者：

Ikeda, Mamoru ^{[1
]}

Azuma, Masamichi ^{[1
,2
]}

Miyamoto, Tsubasa ^{[1
]}

Nishinaka, Hiroyuki ^{[3
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Kyoto, Japan

[2] Symetrix Corp, Colorado Springs, CO USA

[3] Kyoto Inst Technol, Fac Elect Engn & Elect, Kyoto, Japan

来源：

2024 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK 2024 | 2024年

关键词：

component; mist CVD; Mott transition; nickel oxide; non-volatile memory;

D O I：

10.1109/IMFEDK64776.2024.10814222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study demonstrates Correlated Electron RAM (CeRAM) using carbon-doped NiO thin films deposited by mist CVD. Pt/NiO/Pt devices with 10 and 16 mu m Phi capacitor sizes were fabricated. XRD and AFM analyses revealed nanocrystalline or amorphous films with smooth surfaces. Current-voltage measurements confirmed successful RESET and SET operations, demonstrating CeRAM functionality. The observed large resistance ratio indicates optimized carbon doping, suggesting potential for improved memory device performance.

引用

页数：2

共 2 条

[1] Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs [J].

de Araujo, C. A. Paz ;

Celinska, Jolanta ;

McWilliams, Chris R. ;

Shifren, Lucian ;

Yeric, Greg ;

Huang, X. M. Henry ;

Suryavanshi, Saurabh Vinayak ;

Rosendale, Glen ;

Afanas'ev, Valeri ;

Marino, Eduardo C. ;

Narayan, Dushyant Madhav ;

Dessau, Daniel S. .

APL MATERIALS, 2022, 10 (04)

[2] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

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