Design and Optimization of High Performance Multi-Step Separated Trench 4H-SiC JBS Diode

被引：0

作者：

Li, Jinlan ^{[1
]}

Wu, Ziheng ^{[1
]}

Sheng, Huaren ^{[1
]}

Xu, Yan ^{[1
]}

Zhou, Liming ^{[2
]}

机构：

[1] Yangzhou Univ, Coll Informat Engn, Yangzhou 225009, Peoples R China

[2] Yangjie Elect Technol Co Ltd, Yangzhou 225009, Peoples R China

来源：

ELECTRONICS | 2024年 / 13卷 / 21期

基金：

中国国家自然科学基金;

关键词：

4H-SiC junction barrier Schottky (JBS); multi-step trench; trench FLR; electric field; blocking voltage; MOSFET;

D O I：

10.3390/electronics13214143

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a novel 3300 V/40 A 4H-SiC junction barrier Schottky diode (JBS) with a multi-step separated trench (MST) structure is proposed and thoroughly investigated using TCAD simulations. The results show that the introduction of MST expands the Schottky contact area, resulting in a decrease in the forward voltage drop. Furthermore, the combination of the deep P+ shielded region and the central P+ region effectively reduces the leakage current, leading to a 43.7% increase in the blocking voltage compared to conventional 4H-SiC JBS. The effects of the step depth (ds) and the width of the central P+ region (wm) on the device performance are analyzed in depth. In addition, a multi-step trenched linearly graded field-limiting rings (MTLG-FLR) termination ensures a more uniform electric field distribution, and the terminal protection efficiency reaches up to 90%, which further enhances the reliability of the terminal structure.

引用

页数：10

共 27 条

[1] A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance [J].

Deng, Xiaochuan ;

Xu, Xiaojie ;

Li, Xuan ;

Li, Xu ;

Wen, Yi ;

Chen, Wanjun .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (10) :1472-1475

[2]

Deng XC, 2018, 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), P144, DOI 10.1109/WiPDAAsia.2018.8734553

[3]

Donato N, 2020, PROC INT SYMP POWER, P198, DOI [10.1109/ISPSD46842.2020.9170197, 10.1109/ispsd46842.2020.9170197]

[4] Design and fabrication of high performance 4H-SiC TJBS diodes [J].

Dou, Wentao ;

Song, Qingwen ;

Yuan, Hao ;

Tang, Xiaoyan ;

Zhang, Yuming ;

Zhang, Yimen ;

Xiao, Li ;

Wang, Liangyong .

JOURNAL OF CRYSTAL GROWTH, 2020, 533

[5] Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density [J].

Kang, In Ho ;

Seok, Ogyun ;

Moon, Jeong Hyun ;

Na, Moon Kyong ;

Kim, Hyoung Woo ;

Kim, Sang Cheol ;

Bahng, Wook ;

Kim, Nam Kyun .

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2021, 22 (02) :115-120

[6] An Optimal Design for 1.2kV 4H-SiC JBSFET (Junction Barrier Schottky Diode Integrated MOSFET) With Deep P-Well [J].

Kim, Dongyoung ;

Jang, Seung Yup ;

DeBoer, Skylar ;

Morgan, Adam J. ;

Sung, Woongje .

IEEE ELECTRON DEVICE LETTERS, 2022, 43 (05) :785-788

[7] High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode [J].

Li, Mao-Bin ;

Cao, Fei ;

Hu, Hai-Fan ;

Li, Xing-Ji ;

Yang, Jian-Qun ;

Wang, Ying .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 (09) :591-598

[8] Experimental and Simulation Study of Single-Event Leakage Current Degradation and Damage Mechanism in 4H-SiC PiN Diodes [J].

Liu, Keyu ;

Zhang, Zhiwen ;

Tang, Xiaoyan ;

Yuan, Hao ;

Zhang, Yibo ;

Liu, Yancong ;

Han, Chao ;

Zhou, Yu ;

Du, Fengyu ;

Wang, Zixi ;

Song, Qingwen ;

Zhang, Yuming .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) :4891-4896

[9]

Lynch J, 2019, PROC INT SYMP POWER, P223, DOI [10.1109/ISPSD.2019.8757593, 10.1109/ispsd.2019.8757593]

[10]

Mancini S.A., 2022, P 2022 IEEE INT REL, VVolume 62

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