CMOS Temperature Sensors: From Module Design to System Design

被引：0

作者：

Tang, Zhong ^{[1
]}

Yu, Xiao-Peng ^{[2
]}

Shi, Zheng ^{[3
]}

Tan, Nianxiong Nick ^{[1
,3
]}

机构：

[1] Vango Technol Inc, Hangzhou 310053, Peoples R China

[2] Zhejiang Univ, Inst VLSI Design, Hangzhou 310027, Peoples R China

[3] Zhejiang Univ, Hangzhou 310027, Peoples R China

来源：

CHINESE JOURNAL OF ELECTRONICS | 2025年 / 34卷 / 01期

关键词：

Temperature sensors; Design methodology; Circuits; Voltage; Signal processing; Sensor systems; Sensors; Transistors; System analysis and design; MOS devices; CMOS temperature sensor; Time domain; Voltage domain; Bipolar junction transistor; metal-oxide-semicond uctor field-effect transistor; TO-DIGITAL-CONVERTER; 3-SIGMA INACCURACY; DEGREES-C; THERMAL SENSOR; +/-0.5-DEGREES-C; -55-DEGREES-C; OUTPUT;

D O I：

10.23919/cje.2023.00.425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In a smart complementary metal-oxide semiconductor (CMOS) temperature sensor, the temperature information is converted to an electrical signal, such as voltage, current, or time delay, and then it is digitized by an analog-to-digital converter. Instead of categorizing sensors according to their sensing elements, this work introduces different CMOS temperature sensors based on their signal processing domains of the readout circuits. To design a suitable sensor for a specific application, two general design methodologies are also introduced with state-of-the-art examples. Depending on the applications, the corresponding types of the sensor and design methodology can be chosen to optimize the performance.

引用

页码：16 / 25

页数：10