CMOS Temperature Sensors: From Module Design to System Design

被引:0
|
作者
Tang, Zhong [1 ]
Yu, Xiao-Peng [2 ]
Shi, Zheng [3 ]
Tan, Nianxiong Nick [1 ,3 ]
机构
[1] Vango Technol Inc, Hangzhou 310053, Peoples R China
[2] Zhejiang Univ, Inst VLSI Design, Hangzhou 310027, Peoples R China
[3] Zhejiang Univ, Hangzhou 310027, Peoples R China
关键词
Temperature sensors; Design methodology; Circuits; Voltage; Signal processing; Sensor systems; Sensors; Transistors; System analysis and design; MOS devices; CMOS temperature sensor; Time domain; Voltage domain; Bipolar junction transistor; metal-oxide-semicond uctor field-effect transistor; TO-DIGITAL-CONVERTER; 3-SIGMA INACCURACY; DEGREES-C; THERMAL SENSOR; +/-0.5-DEGREES-C; -55-DEGREES-C; OUTPUT;
D O I
10.23919/cje.2023.00.425
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In a smart complementary metal-oxide semiconductor (CMOS) temperature sensor, the temperature information is converted to an electrical signal, such as voltage, current, or time delay, and then it is digitized by an analog-to-digital converter. Instead of categorizing sensors according to their sensing elements, this work introduces different CMOS temperature sensors based on their signal processing domains of the readout circuits. To design a suitable sensor for a specific application, two general design methodologies are also introduced with state-of-the-art examples. Depending on the applications, the corresponding types of the sensor and design methodology can be chosen to optimize the performance.
引用
收藏
页码:16 / 25
页数:10
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