5-55 GHz Watt-level Gallium Nitride Stacked FET Travelling-Wave Power Amplifier

被引：0

作者：

Longhi, Patrick E. ^{[1
]}

Ramella, Chiara ^{[2
]}

Ciccognani, Walter ^{[1
]}

Colangeli, Sergio ^{[1
]}

Pirola, Marco ^{[2
]}

Limiti, Ernesto ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Elect Engn Dept, Rome, Italy

[2] Politecn Torino, Dept Elect & Telecommun, Turin, Italy

来源：

2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024 | 2024年

基金：

欧盟地平线“2020”;

关键词：

travelling-wave amplifiers; millimeter wave integrated circuits; Gallium Nitride; broadband amplifiers; power amplifiers; FET stacking; GAN;

D O I：

10.23919/EuMIC61603.2024.10732117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two well-known ultra wide-band topologies, the travelling-wave amplifier and the stacked cell, are gainfully employed to demonstrate a decade bandwidth behaviour (5-55 GHz) in conjunction with watt-level saturated output power. The selected technology is OMMIC's Gallium Nitride on Silicon, featuring the possibility to simultaneously insert 60-nm and 100-nm gate length FETs in the same MMIC.

引用

页码：315 / 318

页数：4

共 20 条

[1] A MONOLITHIC GAAS 1-13-GHZ TRAVELING-WAVE AMPLIFIER [J].

AYASLI, Y ;

MOZZI, RL ;

VORHAUS, JL ;

REYNOLDS, LD ;

PUCEL, RA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :976-981

[2]

Brown DF, 2016, COMP SEMICOND INTEGR, P90

[3] A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology [J].

Campbell, Charles ;

Lee, Cathy ;

Williams, Victoria ;

Kao, Ming-Yih ;

Tserng, Hua-Quen ;

Saunier, Paul ;

Balisteri, Tony .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (10) :2640-2647

[4] Broadband Amplifier Design Technique by Dissipative Matching Networks [J].

Ciccognani, Walter ;

Colangeli, Sergio ;

Longhi, Patrick E. ;

Serino, Antonio ;

Giofre, Rocco ;

Pace, Lorenzo ;

Limiti, Ernesto .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2021, 68 (01) :148-160

[5]

Dennler P., 2012, IEEE MTT S IMS, DOI [10.1109/MWSYM.2012.6259604, DOI 10.1109/MWSYM.2012.6259604]

[6]

Di Giacomo-Brunel V, 2018, EUR MICROW INTEGRAT, P1, DOI 10.23919/EuMIC.2018.8539905

[7] GaN/Si 37-40 GHz T/R Chip MMIC for 5G Communications [J].

El Kaamouchi, M. ;

Gasmi, A. ;

Wroblewski, B. ;

Leblanc, R. ;

Poulain, J. ;

Altuntas, P. .

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, :225-228

[8] The high voltage/high power FET (HiVP1) [J].

Ezzeddine, AK ;

Huang, HC .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :215-218

[9]

Fraysse JP, 2000, IEEE MTT-S, P529, DOI 10.1109/MWSYM.2000.861108

[10]

Kobayashi K. W., 2016, IEEE CSICS, DOI [10.1109/CSICS.2016.7751023, DOI 10.1109/CSICS.2016.7751023]

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