Electric field driven domain wall dynamics in BaTiO3 nanoparticles
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作者:
Liu, Jialun
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UCL, London Ctr Nanotechnol, London WC1E 6BT, EnglandUCL, London Ctr Nanotechnol, London WC1E 6BT, England
Liu, Jialun
[1
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Yang, David
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Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USAUCL, London Ctr Nanotechnol, London WC1E 6BT, England
Yang, David
[2
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Suzana, Ana F.
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Argonne Natl Lab, Adv Photon Source, Lemont, IL 60439 USAUCL, London Ctr Nanotechnol, London WC1E 6BT, England
Suzana, Ana F.
[3
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Leake, Steven J.
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ESRF, European Synchrotron, 71 Ave Martyrs,CS40220, F-38043 Grenoble 9, FranceUCL, London Ctr Nanotechnol, London WC1E 6BT, England
Leake, Steven J.
[4
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Robinson, Ian K.
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UCL, London Ctr Nanotechnol, London WC1E 6BT, England
Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USAUCL, London Ctr Nanotechnol, London WC1E 6BT, England
Robinson, Ian K.
[1
,2
]
机构:
[1] UCL, London Ctr Nanotechnol, London WC1E 6BT, England
[2] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[3] Argonne Natl Lab, Adv Photon Source, Lemont, IL 60439 USA
[4] ESRF, European Synchrotron, 71 Ave Martyrs,CS40220, F-38043 Grenoble 9, France
We report a detailed investigation into the response of single BaTiO3 (BTO) nanocrystals under applied electric fields (E-field) using Bragg coherent diffraction imaging. Our study reveals pronounced domain wall migration and expansion of a sample measure in situ under applied electric field. The changes are most prominent at the surface of the nanocrystal, where the lack of external strain allows greater domain wall mobility. The observed domain shifts are correlated to the strength and orientation of the applied E-field, following a side-by-side domain model from Suzana et al. [Adv. Funct. Mater. 33, 2208012 (2023)]. Notably, we identified a critical electric field strength of 3 MV/m, which leads to irreversible structural changes, suggesting plastic deformation. The findings highlight how surface effects and intrinsic defects contribute to the enhanced dielectric properties of BTO at the nanoscale, in contrast to bulk materials, where strain limits domain mobility. These findings deepen our understanding of nanoscale dielectric behavior and inform the design of advanced nanoelectronic devices.
机构:
Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China
Yu, Ke
Niu, Yujuan
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Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China
Niu, Yujuan
Zhou, Yongcun
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Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China
Zhou, Yongcun
Bai, Yuanyuan
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Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China
Bai, Yuanyuan
Wang, Hong
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Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China