Effect of Temperature on TiO2/P-Si-Based Memristor Devices as Optical/Electrical Synapse

Light-based modulation on resistive switching has opened a new route for development of the devices for advanced applications like integrated switching with memory functionality, neuromorphic computing, and humanoid robotics. This article presents the wafer-scalable process to fabricate titanium dioxide (TiO2)/porous silicon (P-Si)-based heterostructures for memristor applications. The resistive switching performance of the memristor is analyzed using electrical/optical stimulation. The fabricated devices offer enhanced performance metrics during optical stimulation when compared to electrical stimulation. The memristor device offers the paired pulse facilitation (PPF) index of approximate to 519% (during optical stimulation), which is 3.4 times of the electrical stimulation. Further, the stability and reliability measurements are performed at different temperatures especially (room temperature to 348 K) under 450 nm illumination. The testing results prove that the developed TiO2/P-Si-based memristors are suitable for the next-generation computation systems development.