An Integrated Linear CMOS Hall Sensor for 3-D Magnetic Field Measurement With Low-Noise Readout Circuit

被引:0
|
作者
Zhou, Lin [1 ]
Du, Jun [2 ]
Sun, Hengchao [2 ]
Wang, Shuangxi [1 ]
Li, Jielin [1 ]
Jiang, Haoxiang [1 ]
Xu, Yue [1 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China
[2] Beijing Smartchip Microelect Technol Co Ltd, Beijing 102200, Peoples R China
基金
中国国家自然科学基金;
关键词
Three-dimensional displays; Sensitivity; Noise; Magnetic fields; Magnetic field measurement; Optimization; Multiplexing; Magnetic sensors; Timing; Switches; 3-D Hall sensor; 3-D magnetic measurement; Hall devices; multiplexing readout circuit; TESLAMETER;
D O I
10.1109/TIM.2025.3552867
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents an integrated 3-D Hall sensor with a low-noise analog front end to measure the three-axis linear magnetic field in space. The 3-D Hall device employs a modular design approach, where horizontal and vertical Hall devices (VHDs) are optimized independently, resulting in Hall devices with nearly identical current-related sensitivities (S-I) across all three axes. A shared low-noise analog front end using switching timings for multiplexing is proposed to, furthermore, reduce hardware overhead, which ensures the same accuracy of triaxial signal amplification. The 3-D Hall sensor, prototyped in a 0.18-mu m CMOS-compatible process, occupies a core area of 0.22 mm(2) and draws 4.6 mA from a 1.8-V supply. The experimental results demonstrate that the 3-D Hall sensor prototype exhibits a linearity of greater than 99% over a magnetic field range of +/- 200 mT; furthermore, the prototype obtains a residual offset of 120 mu T and a magnetic field resolution of 146 mu T at a 3-dB bandwidth of 27 kHz.
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页数:9
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