Vapour-liquid-solid-solid growth of two-dimensional non-layered β-Bi2O3 crystals with high hole mobility

被引：2

作者：

Xiong, Yunhai ^{[1
]}

Xu, Duo ^{[1
]}

Zou, Yousheng ^{[1
]}

Xu, Lili ^{[1
]}

Yan, Yujie ^{[2
,3
]}

Wu, Jianghua ^{[2
,3
]}

Qian, Chen ^{[4
]}

Song, Xiufeng ^{[1
]}

Qu, Kairui ^{[1
]}

Zhao, Tong ^{[1
]}

Gao, Jie ^{[1
]}

Yang, Jialin ^{[1
]}

Zhang, Kai ^{[5
,6
]}

Zhang, Shengli ^{[1
]}

Wang, Peng ^{[2
,3
,7
]}

Chen, Xiang ^{[1
]}

Zeng, Haibo ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Engn Res Ctr Quantum Dot Display, Sch Mat Sci & Engn,MIIT Key Lab Adv Display Mat &, Nanjing, Peoples R China

[2] Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Jiangsu Key Lab Artificial Funct Mat, Nanjing, Peoples R China

[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing, Peoples R China

[4] Univ Warwick, Dept Chem, Coventry, England

[5] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, CAS Key Lab Nanobio Interface, Suzhou, Peoples R China

[6] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Key Lab Nanodevices & Applicat, i Lab, Suzhou, Peoples R China

[7] Univ Warwick, Dept Phys, Coventry, England

来源：

NATURE MATERIALS | 2025年

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

WSE2;

D O I：

10.1038/s41563-025-02141-w

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Currently, p-type two-dimensional (2D) materials lag behind n-type ones in both quantity and performance, hindering their use in advanced p-channel transistors and complementary logic circuits. Non-layered materials, which make up 95% of crystal structures, hold the potential for superior p-type 2D materials but remain challenging to synthesize. Here we show a vapour-liquid-solid-solid growth of atomically thin (<1 nm), high-quality, non-layered 2D beta-Bi2O3 crystals on a SiO2/Si substrate. These crystals form via a transformation from layered BiOCl intermediates. We further realize 2D beta-Bi2O3 transistors with room-temperature hole mobility and an on/off current ratio of 136.6 cm(2) V-1 s(-1) and 1.2 x 10(8), respectively. The p-type nature is due to the strong suborbital hybridization of Bi 6s(2)6p(3) with O 2p(4) at the crystal's M-point valence band maximum. Our work can be used as a reference that adds more 2D non-layered materials to the 2D toolkit and shows 2D beta-Bi2O3 to be promising candidate for future electronics.

引用

页码：688 / 697

页数：12