Electrolyte Gated Transistors for Brain Inspired Neuromorphic Computing and Perception Applications: A Review

被引:0
作者
Wang, Weisheng [1 ]
Zhu, Liqiang [1 ]
机构
[1] Ningbo Univ, Sch Phys Sci & Technol, Ningbo 315211, Peoples R China
关键词
artificial intelligence; neuromorphic computing; electrolyte-gated transistors; bionic synapses; artificial perceptual systems; TIMING-DEPENDENT PLASTICITY; LOW-VOLTAGE; PROTON; METAPLASTICITY; SYNAPSES; DEVICE; MEMORY; MODEL;
D O I
10.3390/nano15050348
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Emerging neuromorphic computing offers a promising and energy-efficient approach to developing advanced intelligent systems by mimicking the information processing modes of the human brain. Moreover, inspired by the high parallelism, fault tolerance, adaptability, and low power consumption of brain perceptual systems, replicating these efficient and intelligent systems at a hardware level will endow artificial intelligence (AI) and neuromorphic engineering with unparalleled appeal. Therefore, construction of neuromorphic devices that can simulate neural and synaptic behaviors are crucial for achieving intelligent perception and neuromorphic computing. As novel memristive devices, electrolyte-gated transistors (EGTs) stand out among numerous neuromorphic devices due to their unique interfacial ion coupling effects. Thus, the present review discusses the applications of the EGTs in neuromorphic electronics. First, operational modes of EGTs are discussed briefly. Second, the advancements of EGTs in mimicking biological synapses/neurons and neuromorphic computing functions are introduced. Next, applications of artificial perceptual systems utilizing EGTs are discussed. Finally, a brief outlook on future developments and challenges is presented.
引用
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页数:26
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