Conventional, wide-bandgap, and hybrid power converters: A comprehensive review

被引:0
作者
Suthar, Anvi N. [1 ]
Venkataramanaiah, J. [1 ]
Suresh, Y. [2 ]
机构
[1] Sardar Vallabhbhai Natl Inst Technol, Dept Elect Engn, Surat 395007, Gujarat, India
[2] Natl Inst Technol, Dept Elect & Elect Engn, Surathkal 575025, Karnataka, India
关键词
WBG technology; Conventional power switch converters (CPSC); Hybrid power switch converters (HPSC); Wide-bandgap power switch converter (WBG-PSC); MODULAR MULTILEVEL CONVERTER; POINT-CLAMPED CONVERTER; DC BOOST CONVERTER; GAN HEMTS; SIC MOSFET; TRANSIENT ANALYSIS; HIGH-FREQUENCY; MOTOR DRIVE; SWITCH; IGBT;
D O I
10.1016/j.rser.2025.115419
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
This review delves into cutting-edge wide band gap (WBG) technology, a third-generation switching device, exploring its fundamental properties and system-level applications. Emphasizing silicon carbide (SiC) and gallium nitride (GaN) materials, the review highlights their superior energy efficiency in power electronic converters compared to traditional silicon (Si) materials. WBG-based converters achieve higher efficiency and reducing energy losses as compared to Si-based converters. These devices operate effectively at higher switching frequencies and reducing passive component size in direct current (DC)- alternating current (AC) applications at higher cost. Thereby, this study identifies hybrid converters combining Si and WBG switches as cost-effective solutions, achieving efficiency gains of higher percentages over fully Si-based designs. The review presents a parametric comparison among traditional, fully WBG-based, and hybrid converters, examining various aspects such as switching frequency, blocking voltages, losses, efficiency, reliability, cost, thermal constraints and device count which remain essential for the broader adoption in various applications.
引用
收藏
页数:19
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