Conventional, wide-bandgap, and hybrid power converters: A comprehensive review

被引:0
作者
Suthar, Anvi N. [1 ]
Venkataramanaiah, J. [1 ]
Suresh, Y. [2 ]
机构
[1] Sardar Vallabhbhai Natl Inst Technol, Dept Elect Engn, Surat 395007, Gujarat, India
[2] Natl Inst Technol, Dept Elect & Elect Engn, Surathkal 575025, Karnataka, India
关键词
WBG technology; Conventional power switch converters (CPSC); Hybrid power switch converters (HPSC); Wide-bandgap power switch converter (WBG-PSC); MODULAR MULTILEVEL CONVERTER; POINT-CLAMPED CONVERTER; DC BOOST CONVERTER; GAN HEMTS; SIC MOSFET; TRANSIENT ANALYSIS; HIGH-FREQUENCY; MOTOR DRIVE; SWITCH; IGBT;
D O I
10.1016/j.rser.2025.115419
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
This review delves into cutting-edge wide band gap (WBG) technology, a third-generation switching device, exploring its fundamental properties and system-level applications. Emphasizing silicon carbide (SiC) and gallium nitride (GaN) materials, the review highlights their superior energy efficiency in power electronic converters compared to traditional silicon (Si) materials. WBG-based converters achieve higher efficiency and reducing energy losses as compared to Si-based converters. These devices operate effectively at higher switching frequencies and reducing passive component size in direct current (DC)- alternating current (AC) applications at higher cost. Thereby, this study identifies hybrid converters combining Si and WBG switches as cost-effective solutions, achieving efficiency gains of higher percentages over fully Si-based designs. The review presents a parametric comparison among traditional, fully WBG-based, and hybrid converters, examining various aspects such as switching frequency, blocking voltages, losses, efficiency, reliability, cost, thermal constraints and device count which remain essential for the broader adoption in various applications.
引用
收藏
页数:19
相关论文
共 185 条
  • [1] A Generalized Scalable Configuration of Hybrid "Si plus SiC" Paralleled Modular ANPC Converter
    Abarzadeh, Mostafa
    Weise, Nathan
    Caron, Simon
    [J]. 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), 2021, : 2791 - 2797
  • [2] A New Configuration of Paralleled Modular ANPC Multilevel Converter Controlled by an Improved Modulation Method for 1 MHz, 1 MW EV Charger
    Abarzadeh, Mostafa
    Khan, Waqar A.
    Weise, Nathan
    Al-Haddad, Kamal
    EL-Refaie, Ayman M.
    [J]. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2021, 57 (03) : 3164 - 3178
  • [3] Abbasi M, 2020, APPL POWER ELECT CO, P905, DOI [10.1109/apec39645.2020.9124294, 10.1109/APEC39645.2020.9124294]
  • [4] Wide Bandgap Devices in Electric Vehicle Converters: A Performance Survey
    Abdelrahman, Ahmed S.
    Erdem, Zekiye
    Attia, Yosra
    Youssef, Mohamed Z.
    [J]. CANADIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING-REVUE CANADIENNE DE GENIE ELECTRIQUE ET INFORMATIQUE, 2018, 41 (01): : 45 - 54
  • [5] Acharya S, 2017, IEEE ENER CONV, P3329, DOI 10.1109/ECCE.2017.8096600
  • [6] Compact GaN-Based 25kW, 480V Three-Level Active Front End Rectifier
    Adeli, Mohammad Hassan
    Deniz, Erkan
    Altin, Necmi
    Ozdemir, Saban
    Nasiri, Adel
    [J]. 2024 IEEE SIXTH INTERNATIONAL CONFERENCE ON DC MICROGRIDS, ICDCM 2024, 2024,
  • [7] Ahmadi M, 2012, 2012 IEEE energytech, P1, DOI [10.1109/EnergyTech.2012.6304643, DOI 10.1109/ENERGYTECH.2012.6304643]
  • [8] Ahmed MR, 2015, APPL POWER ELECT CO, P941, DOI 10.1109/APEC.2015.7104462
  • [9] Al-bayati AMS, 2017, NORTH AMER POW SYMP
  • [10] Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC-DC boost converter
    Alam, Mohd
    Kumar, Kuldeep
    Dutta, Viresh
    [J]. SN APPLIED SCIENCES, 2019, 1 (12):