Room-temperature ferromagnetism of chromium-doped molybdenum disulfide synthesized via chemical vapor deposition

被引:0
作者
Min, Shaolong [1 ]
Li, You [1 ]
Qu, Ziyang [1 ]
Liu, Mingyan [1 ]
Zhao, Yibin [1 ]
Zheng, Hongqian [1 ]
Huang, Chengxi [1 ,2 ]
Kan, Erjun [1 ,2 ]
Wan, Yi [1 ,2 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Phys, MIIT Key Lab Semicond Microstruct & Quantum Sensin, Nanjing, Peoples R China
[2] Nanjing Univ Sci & Technol, Engn Res Ctr Semicond Device Optoelect Hybrid Inte, Nanjing, Peoples R China
基金
中国国家自然科学基金;
关键词
MOS2; SEMICONDUCTOR;
D O I
10.1063/5.0245793
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional (2D) magnetic materials offer promising prospects for applications in magnetic storage and spin field-effect transistors. However, the inherently low Curie temperatures of intrinsic 2D ferromagnetic semiconductor materials pose significant limitations on their practical device applications. An effective approach to achieving room-temperature ferromagnetism involves doping non-magnetic semiconductors with specific magnetic atoms. Here, we present the room-temperature ferromagnetism of chromium (Cr)-doped molybdenum disulfide (MoS2) nanosheets synthesized through chemical vapor deposition. The magnetic hysteresis loops, recorded across a temperature span of 10-300 K, underscore the remarkable stability of their magnetic attributes. To gain deeper microscopic insights into the magnetic properties of Cr-doped MoS2, we conducted first-principles calculations, which further validated our experimental findings. This research underscores a promising pathway for the development of 2D ferromagnetic materials with broad application potential in magnetic storage and spin field-effect transistors.
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页数:6
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