Novel Inorganic IR Release Process for High Temperature W2W and D2W Integration

被引：0

作者：

Urban, Peter ^{[1
]}

Povazay, Boris ^{[1
]}

Uhrmann, Thomas ^{[1
]}

Gruber, Michael Josef ^{[1
]}

Thallner, Bernd ^{[1
]}

Wimplinger, Markus ^{[1
]}

机构：

[1] EV Grp, St Florian, Austria

来源：

PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年

关键词：

W2W; D2W integration; IR Release Process; High Temperature Stable Temporary Bonding;

D O I：

10.1109/ECTC51529.2024.00073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel laser lift-off technology has been developed to enable temporary bonding and release through Si carrier wafers. In contrast to well established UV laser de-bonding, high-temperature-stable and ultrathin inorganic materials took over the function of the laser release layer. These LayerRelease (TM) layers feature highly selective and sensitive laser-matter interaction for minimal mechanical, radiative and thermal stress lift-off of the product, can be deposited using standard fab deposition tools and their residues are removable with common wafer cleaning agents.

引用

页码：415 / 419

页数：5