Novel Inorganic IR Release Process for High Temperature W2W and D2W Integration

被引：0
|
作者：
Urban, Peter [1 ]
Povazay, Boris [1 ]
Uhrmann, Thomas [1 ]
Gruber, Michael Josef [1 ]
Thallner, Bernd [1 ]
Wimplinger, Markus [1 ]
机构：
[1] EV Grp, St Florian, Austria
来源：
PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年
关键词：
W2W; D2W integration; IR Release Process; High Temperature Stable Temporary Bonding;
D O I：
10.1109/ECTC51529.2024.00073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel laser lift-off technology has been developed to enable temporary bonding and release through Si carrier wafers. In contrast to well established UV laser de-bonding, high-temperature-stable and ultrathin inorganic materials took over the function of the laser release layer. These LayerRelease (TM) layers feature highly selective and sensitive laser-matter interaction for minimal mechanical, radiative and thermal stress lift-off of the product, can be deposited using standard fab deposition tools and their residues are removable with common wafer cleaning agents.
引用
收藏
页码：415 / 419
页数：5
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