Sliding ferroelectricity in two-dimensional materials and device applications

被引:1
作者
Sun, Xiaoyao [1 ]
Xia, Qian [1 ]
Cao, Tengfei [2 ]
Yuan, Shuoguo [1 ]
机构
[1] China Univ Geosci, Fac Mat Sci & Chem, Wuhan 430074, Peoples R China
[2] Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China
关键词
Two-dimensional materials; Ferroelectric materials; Sliding ferroelectricity; Ferroelectric devices; 2D MATERIALS; GRAPHENE; GROWTH; STATES; POLARIZATION; STACKING; MEMORY; HETEROJUNCTION; TRANSISTOR; INTERFACE;
D O I
10.1016/j.mser.2025.100927
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The discovery of emerging two-dimensional (2D) sliding ferroelectricity has opened up an important approach to constructing ferroelectric materials at the atomic scale. This review presents the recent important progress of the emerging 2D sliding ferroelectricity materials and their sliding device applications. Firstly, the basic mechanism of sliding ferroelectricity is explained, and a comprehensive summary is presented from typical fabrication strategies and characterization methods to prepare and characterize the sliding ferroelectric materials. Secondly, we summarize the experimental progress in different categories of typical 2D materials, highlighting the key role of layer dependence, material structure, and interlayer twisting angle for the construction of sliding ferroelectricity. Thirdly, we emphasize the sliding device applications and discuss the potential applications of sliding ferroelectricity-based devices. The emergence of sliding ferroelectricity not only provides a rich space for indepth study on the emerging family of ferroelectric materials and mechanisms but also offers an excellent playground for the construction and application of sliding ferroelectricity devices. Finally, perspectives are provided to address the current challenges in terms of material design, physical mechanism, and unprecedented ferroelectric device applications of sliding electronics.
引用
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页数:31
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