Sliding ferroelectricity in two-dimensional materials and device applications

被引:1
作者
Sun, Xiaoyao [1 ]
Xia, Qian [1 ]
Cao, Tengfei [2 ]
Yuan, Shuoguo [1 ]
机构
[1] China Univ Geosci, Fac Mat Sci & Chem, Wuhan 430074, Peoples R China
[2] Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China
关键词
Two-dimensional materials; Ferroelectric materials; Sliding ferroelectricity; Ferroelectric devices; 2D MATERIALS; GRAPHENE; GROWTH; STATES; POLARIZATION; STACKING; MEMORY; HETEROJUNCTION; TRANSISTOR; INTERFACE;
D O I
10.1016/j.mser.2025.100927
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The discovery of emerging two-dimensional (2D) sliding ferroelectricity has opened up an important approach to constructing ferroelectric materials at the atomic scale. This review presents the recent important progress of the emerging 2D sliding ferroelectricity materials and their sliding device applications. Firstly, the basic mechanism of sliding ferroelectricity is explained, and a comprehensive summary is presented from typical fabrication strategies and characterization methods to prepare and characterize the sliding ferroelectric materials. Secondly, we summarize the experimental progress in different categories of typical 2D materials, highlighting the key role of layer dependence, material structure, and interlayer twisting angle for the construction of sliding ferroelectricity. Thirdly, we emphasize the sliding device applications and discuss the potential applications of sliding ferroelectricity-based devices. The emergence of sliding ferroelectricity not only provides a rich space for indepth study on the emerging family of ferroelectric materials and mechanisms but also offers an excellent playground for the construction and application of sliding ferroelectricity devices. Finally, perspectives are provided to address the current challenges in terms of material design, physical mechanism, and unprecedented ferroelectric device applications of sliding electronics.
引用
收藏
页数:31
相关论文
共 171 条
  • [1] A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect
    Akamatsu, Takatoshi
    Ideue, Toshiya
    Zhou, Ling
    Dong, Yu
    Kitamura, Sota
    Yoshii, Mao
    Yang, Dongyang
    Onga, Masaru
    Nakagawa, Yuji
    Watanabe, Kenji
    Taniguchi, Takashi
    Laurienzo, Joseph
    Huang, Junwei
    Ye, Ziliang
    Morimoto, Takahiro
    Yuan, Hongtao
    Iwasa, Yoshihiro
    [J]. SCIENCE, 2021, 372 (6537) : 68 - +
  • [2] [Anonymous], COMMUNICATION
  • [3] Polar meron-antimeron networks in strained and twisted bilayers
    Bennett, Daniel
    Chaudhary, Gaurav
    Slager, Robert-Jan
    Bousquet, Eric
    Ghosez, Philippe
    [J]. NATURE COMMUNICATIONS, 2023, 14 (01)
  • [4] First-Principles Exploration of Two-Dimensional Transition Metal Dichalcogenides Based on Fe, Co, Ni, and Cu Groups and Their van der Waals Heterostructures
    Besse, Rafael
    Lima, Matheus P.
    Da Silva, Juarez L. F.
    [J]. ACS APPLIED ENERGY MATERIALS, 2019, 2 (12) : 8491 - 8501
  • [5] Developing fatigue-resistant ferroelectrics using interlayer sliding switching
    Bian, Renji
    He, Ri
    Pan, Er
    Li, Zefen
    Cao, Guiming
    Meng, Peng
    Chen, Jiangang
    Liu, Qing
    Zhong, Zhicheng
    Li, Wenwu
    Liu, Fucai
    [J]. SCIENCE, 2024, 385 (6704) : 57 - 62
  • [6] High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning
    Bian, Renji
    Cao, Guiming
    Pan, Er
    Liu, Qing
    Li, Zefen
    Liang, Lei
    Wu, Qingyun
    Ang, Lay Kee
    Li, Wenwu
    Zhao, Xiaoxu
    Liu, Fucai
    [J]. NANO LETTERS, 2023, 23 (10) : 4595 - 4601
  • [7] Measurement of Ultra-High-Energy Diffuse Gamma-Ray Emission of the Galactic Plane from 10 TeV to 1 PeV with LHAASO-KM2A
    Cao, Zhen
    Aharonian, F.
    An, Q.
    Axikegu
    Bai, Y. X.
    Bao, Y. W.
    Bastieri, D.
    Bi, X. J.
    Bi, Y. J.
    Cai, J. T.
    Cao, Q.
    Cao, W. Y.
    Cao, Zhe
    Chang, J.
    Chang, J. F.
    Chen, A. M.
    Chen, E. S.
    Chen, Liang
    Chen, Lin
    Chen, Long
    Chen, M. J.
    Chen, M. L.
    Chen, Q. H.
    Chen, S. H.
    Chen, S. Z.
    Chen, T. L.
    Chen, Y.
    Cheng, N.
    Cheng, Y. D.
    Cui, M. Y.
    Cui, S. W.
    Cui, X. H.
    Cui, Y. D.
    Dai, B. Z.
    Dai, H. L.
    Dai, Z. G.
    Danzengluobu
    della Volpe, D.
    Dong, X. Q.
    Duan, K. K.
    Fan, J. H.
    Fan, Y. Z.
    Fang, J.
    Fang, K.
    Feng, C. F.
    Feng, L.
    Feng, S. H.
    Feng, X. T.
    Feng, Y. L.
    Gabici, S.
    [J]. PHYSICAL REVIEW LETTERS, 2023, 131 (15)
  • [8] Mapping Grains, Boundaries, and Defects in 2D Covalent Organic Framework Thin Films
    Castano, Ioannina
    Evans, Austin M.
    dos Reis, Roberto
    Dravid, Vinayak P.
    Gianneschi, Nathan C.
    Dichtel, William R.
    [J]. CHEMISTRY OF MATERIALS, 2021, 33 (04) : 1341 - 1352
  • [9] Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI2 Layers
    Chen, Xinfeng
    Ding, Xinkai
    Gou, Gaoyang
    Zeng, Xiao Cheng
    [J]. NANO LETTERS, 2024, 24 (10) : 3089 - 3096
  • [10] Ferroelectric-tuned van der Waals heterojunction with band alignment evolution
    Chen, Yan
    Wang, Xudong
    Huang, Le
    Wang, Xiaoting
    Jiang, Wei
    Wang, Zhen
    Wang, Peng
    Wu, Binmin
    Lin, Tie
    Shen, Hong
    Wei, Zhongming
    Hu, Weida
    Meng, Xiangjian
    Chu, Junhao
    Wang, Jianlu
    [J]. NATURE COMMUNICATIONS, 2021, 12 (01)