4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band

被引:0
作者
Wang, Yifu [1 ,2 ]
Xu, Weizong [1 ,3 ]
Zhou, Dong [1 ,2 ]
Zhou, Feng [1 ,2 ]
Ren, Fangfang [1 ,3 ]
Chen, Dunjun [1 ,2 ]
Zhang, Rong [1 ,3 ]
Zheng, Youdou [1 ,2 ]
Lu, Hai [1 ,2 ,3 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210023, Peoples R China
[2] Nanjing Univ, Key Lab Optoelect Devices & Syst Extreme Performan, Nanjing 210023, Peoples R China
[3] Hefei Natl Lab, Hefei 230088, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon carbide; Ultraviolet sources; Detectors; Electrodes; Silicon; Position measurement; Resistors; Photoconductivity; Lighting; Ion implantation; 4H-SiC; p-i-n; position sensitive detector; ion implantation;
D O I
10.1109/LED.2024.3521082
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm x 6.5 mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of 63 mu m, a low nonlinearity of 2.1% and a high position resolution of 8.5 mu m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.
引用
收藏
页码:243 / 246
页数:4
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