Precise Modeling of Silicon Carbide-Based Power Switches

被引：0
|
作者：
Tang, Boxuan [1 ]
Deng, Yunfeng [1 ]
Wang, Yici [1 ]
Liang, Rui [2 ]
Wang, Kaiyuan [1 ]
Sun, Jinhong [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
[2] Hong Kong Polytech Univ, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
2024 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS SYSTEMS AND APPLICATIONS, PESA 2024 | 2024年
关键词：
SIC MOSFET; switching loss; dual-pulse simulation test; MOSFET;
D O I：
10.1109/PESA62148.2024.10594912
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper first introduces the characteristics and properties of SiC MOSFETs, focusing on a silicon carbide module, the C2M0080120D, manufactured by CREE. A detailed analysis of the static and dynamic characteristics of SiC MOSFET modules is conducted. Static characteristics encompass the effects of different gate drive voltages, temperature variations, and junction capacitance on the device. Dynamic characteristics were analyzed based on the turn-on and turn-off processes of SiC MOSFETs. Subsequently, using a dual-pulse simulation circuit, the impact factors affecting the module's switching performance, including drive resistance and parasitic inductance, are investigated.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Silicon carbide and silicon carbide-based structures - The physics of epitaxy
    Masri, P
    SURFACE SCIENCE REPORTS, 2002, 48 (1-4) : 1 - 51
  • [2] Graphene/silicon carbide-based scaffolds
    Mynbaeva, M. G.
    Sitnikova, A. A.
    Kirilenko, D. A.
    Kotousova, I. S.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (33)
  • [3] Armor silicon carbide-based ceramics
    Medvedovski, E
    27TH INTERNATIONAL COCOA BEACH CONFERENCE ON ADVANCED CERAMICS AND COMPOSITES: A, 2003, 24 (03): : 365 - 373
  • [4] Development of silicon carbide-based anisotropic membrane
    Artyukhin, OI
    Kravchik, AE
    Petrova, IS
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 1999, 72 (12) : 2150 - 2152
  • [5] Silicon Carbide-Based DNA Sensing Technologies
    Al Mamun, Abdulla
    Mcgarrity, Mason
    Kim, Jong-Hoon
    Zhao, Feng
    MICROMACHINES, 2023, 14 (08)
  • [6] Silicon carbide-based detection of hydrogen and hydrocarbons
    Hunter, GW
    Neudeck, PG
    Chen, LY
    Knight, D
    Liu, CC
    Wu, QH
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 817 - 820
  • [7] Silicon carbide-based ceramics for ballistic protection
    Medvedovski, E
    CERAMIC ARMOR AND ARMOR SYSTEMS, 2003, 151 : 19 - 35
  • [8] Erosion replication of Silicon carbide-based structures
    Bazhenov, OG
    Karachinov, VA
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (21): : 26 - 29
  • [9] Silicon carbide-based materials for joining silicon carbide composites for fusion energy applications
    Lewinsohn, CA
    Jones, RH
    Colombo, P
    Riccardi, B
    JOURNAL OF NUCLEAR MATERIALS, 2002, 307 (2 SUPPL.) : 1232 - 1236
  • [10] Silicon Carbide-based Materials from Rice Husk
    Cong, Qianmin
    Zhu, Xingxing
    Ban, Zhangjie
    Li, Junzhe
    Cai, Zhengyu
    Pei, Lizhai
    CURRENT NANOSCIENCE, 2025, 21 (04) : 585 - 595
12345