New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si-SiO2 Interface Traps

被引：0

作者：

Geng, Huimin ^{[1
]}

Guan, Enhao ^{[2
]}

Yang, Jianqun ^{[1
]}

Lv, Gang ^{[1
]}

Li, Weiqi ^{[3
]}

Liu, Zhongli ^{[1
]}

Shao, Wenzhu ^{[1
]}

Li, Xingji ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

[2] Sanan Semicond Co Ltd, Changsha 410017, Hunan, Peoples R China

[3] Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 03期

关键词：

Radiation effects; Logic gates; Radiative recombination; Electron traps; Semiconductor device measurement; Transistors; MOSFET; Current measurement; Silicon; Electrons; Gate sweep (GS); interface traps; oxide charges; recombination enhanced defect reaction (REDR); DISPLACEMENT DAMAGE; IONIZATION; MECHANISMS; CAPTURE; PASSIVATION; IRRADIATION;

D O I：

10.1109/TED.2025.3532410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps. Here, the REDR effect is studied at the Si-SiO2 interface in the base region of gate-controlled lateral p-n-p transistors (GLPNPs) by forward bias method. There is a significant correlation between the peak variation and the ionization defects (oxide charges and interface traps) in gate sweep (GS) curve. For GLPNPs with high oxide charges and low interface traps, the change rate of surface recombination current at peak in GS curve is smaller. This result provides strong evidence for the REDR effect of interface traps. In addition, based on technology computer-aided design (TCAD) simulation, the possible change of interface traps state after REDR effect is proposed.

引用

页码：965 / 970

页数：6

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