Optimization of CTS thin film solar cell: A numerical investigation based on USP deposited thin films

CTS (Cu2SnS3) can be used in the next generation of thin-film solar cells due to its non-toxicity, affordability, and natural availability. CTS has a direct bandgap, high absorption coefficient, making it an attractive and environmentally friendly choice for fabrication of solar cells. Ultrasonic spray pyrolysis is used to deposit CTS (absorber layer) and ZnS (buffer layer) films and they are characterized by XRD, SEM and UV-Vis spectroscopy. Based on experimental results, numerical simulation has been performed using SCAPS 1D. FTO/CTS/ZnS/Ag is the structure of device, where Ag act as an electrode. In this paper, a study is carried out to investigate the effects of thickness, doping concentrations in CTS and ZnS layer, working temperatures, bandgap variations, and defect densities on these solar cells. At the temperature of 300K, the proposed cell exhibits a power conversion efficiency of 8.25 %, open circuit voltage 0.4252V, short circuit current 24.82 mA/cm2, FF 78.18 % respectively.