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Noninvasive Deterministic Nanostructures Lithography on 2D Transition Metal Dichalcogenides
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作者:

Ramo, Lorenzo
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Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Peci, Ermes
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Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Magnozzi, Michele
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Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Spotorno, Emma
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Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Venturino, Valentina
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Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Sygletou, Maria
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Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Giordano, Maria Caterina
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Univ Genoa, Dipartimento Fis, LabNano, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Zambito, Giorgio
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Univ Genoa, Dipartimento Fis, LabNano, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Telesio, Francesca
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Univ Genoa, Dipartimento Fis, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Milosz, Zygmunt
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Elettra Sncrotrone Trieste SCpA, SS 14,Km 163,5 Area Sci Pk, I-34149 Trieste, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Canepa, Maurizio
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Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy

Bisio, Francesco
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CNR SPIN, Cso Perrone 24, I-16152 Genoa, Italy Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy
机构:
[1] Univ Genoa, Dipartimento Fis, OptMatLab, Via Dodecaneso 33, I-16146 Genoa, Italy
[2] Univ Genoa, Dipartimento Fis, LabNano, Via Dodecaneso 33, I-16146 Genoa, Italy
[3] Univ Genoa, Dipartimento Fis, Via Dodecaneso 33, I-16146 Genoa, Italy
[4] Elettra Sncrotrone Trieste SCpA, SS 14,Km 163,5 Area Sci Pk, I-34149 Trieste, Italy
[5] CNR SPIN, Cso Perrone 24, I-16152 Genoa, Italy
关键词:
MoS2;
nanophotonics;
noninvasive nanolithography;
thermal scanning probe lithographies transition metal dichalcogenides;
van der Waals materials;
TIP-ENHANCED PHOTOLUMINESCENCE;
MONOLAYER MOS2;
ELECTRONIC-STRUCTURE;
HYDROGEN EVOLUTION;
RAMAN-SPECTROSCOPY;
OPTICAL-PROPERTIES;
WS2;
HETEROSTRUCTURES;
GRAPHENE;
CRYSTALS;
D O I:
10.1002/adem.202401157
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The coupling of nanostructures with emerging 2D semiconductors is gaining significant interest thanks to the unique features of these hybrids systems, which make them key platforms for next-generation applications in electronics, optoelectronics, and sensing. Top-down lithographic approaches uniquely enable the fully deterministic high-resolution fabrication of nanostructures, but some of them, like electron-beam lithography and focused ion-beam lithography, employ energetic particles that may damage 2D materials causing an unwanted loss of functionality. Herein thermal scanning probe lithography is applied for the realization of metallic nanoantennas directly on top of exfoliated 2D MoS2 flakes, showing it can avoid the degradation of this delicate substrate. It is shown that the morphologic and optical features of MoS2 are fully preserved after the lithography.
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