Higher-order topology protected by latent crystalline symmetries

被引:2
作者
Eek, Lumen [1 ]
Rontgen, Malte [2 ]
Moustaj, Anouar [1 ]
Smith, Cristiane Morais [1 ]
机构
[1] Univ Utrecht, Inst Theoret Phys, NL-3584 CC Utrecht, Netherlands
[2] Univ Mans, Ctr Natl Rech Sci, Unite Mixte Rech 6613, Lab Acoust, Ave O Messiaen, F-72085 Mans 9, France
关键词
POLARIZATION;
D O I
10.21468/SciPostPhys.18.2.061
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate that rotation symmetry is not a necessary requirement for the existence of fractional corner charges in C,-symmetric higher-order topological crystalline insulators. Instead, it is sufficient to have a latent rotation symmetry, which may be revealed upon performing an isospectral reduction on the system. We introduce the concept of a filling anomaly for latent crystalline symmetric systems, and propose modified topological invariants. The notion of higher-order topology in two dimensions protected by C, symmetry is thus generalized to a protection by latent symmetry. Our claims are corroborated by concrete examples of models that show non-trivial corner charge in the absence of C,-symmetry. This work extends the classification of topological crystalline insulators to include latent symmetries.
引用
收藏
页数:36
相关论文
共 43 条
[1]   Nonstandard symmetry classes in mesoscopic normal-superconducting hybrid structures [J].
Altland, A ;
Zirnbauer, MR .
PHYSICAL REVIEW B, 1997, 55 (02) :1142-1161
[2]   Quantization of fractional corner charge in Cn-symmetric higher-order topological crystalline insulators [J].
Benalcazar, Wladimir A. ;
Li, Tianhe ;
Hughes, Taylor L. .
PHYSICAL REVIEW B, 2019, 99 (24)
[3]   Electric multipole moments, topological multipole moment pumping, and chiral hinge states in crystalline insulators [J].
Benalcazar, Wladimir A. ;
Bernevig, B. Andrei ;
Hughes, Taylor L. .
PHYSICAL REVIEW B, 2017, 96 (24)
[4]  
Bunimovich L, 2014, SPRINGER MONOGR MATH, P1, DOI 10.1007/978-1-4939-1375-6
[5]   Topological edge and corner states in bismuth fractal nanostructures [J].
Canyellas, R. ;
Liu, Chen ;
Arouca, R. ;
Eek, L. ;
Wang, Guanyong ;
Yin, Yin ;
Guan, Dandan ;
Li, Yaoyi ;
Wang, Shiyong ;
Zheng, Hao ;
Liu, Canhua ;
Jia, Jinfeng ;
Smith, C. Morais .
NATURE PHYSICS, 2024, 20 (09) :1421-1428
[6]   Topological two-dimensional Su-Schrieffer-Heeger analog acoustic networks: Total reflection at corners and corner induced modes [J].
Coutant, Antonin ;
Achilleos, Vassos ;
Richoux, Olivier ;
Theocharis, Georgios ;
Pagneux, Vincent .
JOURNAL OF APPLIED PHYSICS, 2021, 129 (12)
[7]   Electronic and transport properties of T-graphene nanoribbon: Symmetry-dependent multiple Dirac points, negative differential resistance and linear current-bias characteristics [J].
Dai, C. J. ;
Yan, X. H. ;
Xiao, Y. ;
Guo, Y. D. .
EPL, 2014, 107 (03)
[8]   Emergent non-Hermitian models [J].
Eek, Lumen ;
Moustaj, Anouar ;
Rontgen, Malte ;
Pagneux, Vincent ;
Achilleos, Vassos ;
Smith, Cristiane Morais .
PHYSICAL REVIEW B, 2024, 109 (04)
[9]   Higher-Order Topological Insulators and Semimetals on the Breathing Kagome and Pyrochlore Lattices [J].
Ezawa, Motohiko .
PHYSICAL REVIEW LETTERS, 2018, 120 (02)
[10]   New classes of three-dimensional topological crystalline insulators: Nonsymmorphic and magnetic [J].
Fang, Chen ;
Fu, Liang .
PHYSICAL REVIEW B, 2015, 91 (16)