Tungsten oxide nanowires prepared by thermal oxidation for application in cold cathode flat panel x-ray source

被引:1
作者
Liu, Qi [1 ]
Lin, Zufang [1 ,2 ]
Song, Guichen [1 ]
Kang, Song [1 ]
Wang, Chengyun [1 ]
Deng, Shaozhi [1 ]
Xu, Ningsheng [1 ]
Chen, Jun [1 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
[2] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2025年 / 43卷 / 02期
关键词
FIELD-EMISSION;
D O I
10.1116/6.0004123
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Tungsten oxide (WO3-X) nanowire field emitters have important applications in vacuum microelectronic devices, such as cold cathode flat panel x-ray sources. In this study, large-area, high current density, and defect-rich monoclinic WO3-X nanowires were directly synthesized on a glass substrate by thermal oxidation. Field emission measurements from a 4.5 x 4.5 cm(2) sample show that a turn-on field of 4.8 MV/m and a high current density of 15.2 mA/cm(2) were achieved. Stable emission current with a fluctuation of 1.78% was obtained. Furthermore, a flat panel x-ray source with a reflective anode was fabricated using as-grown WO3-X nanowires as the cold cathode. A radiation dose rate of 1.83 mGy/s was obtained at an anode voltage of 60 kV and a current of 484.1 mu A. X-ray imaging experiments were carried out and clear imaging results were obtained. This work is significant for promoting the application of WO3-X nanowires in large-area field emission devices.
引用
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页数:8
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