ε-Ga2O3 solar-blind photodetector: Pyroelectric effect and flame sensing application

被引：3

作者：

Zhou, Chang ^{[1
]}

Wang, Jipeng ^{[1
]}

Shu, Lincong ^{[1
]}

Hu, Ji ^{[2
]}

Xi, Zhaoying ^{[1
]}

Li, Shan ^{[1
]}

Tang, Weihua ^{[1
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Innovat Ctr Gallium Oxide Semicond IC GAO, Nanjing 210023, Peoples R China

[2] Mianyang Scitech City Inst Photon Technol, Mianyang 621000, Peoples R China

来源：

VACUUM | 2025年 / 234卷

基金：

中国国家自然科学基金;

关键词：

Schottky photodiode; High temperature; Photodetector; Self-powered; Flame sensor; SCHOTTKY; DIODES;

D O I：

10.1016/j.vacuum.2025.114060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The e-Ga2O3 pyroelectric material is ideal for DUV photodetectors, especially for high-temperature applications like atmospheric monitoring and flame detection. This study discusses the performance of Ni/e-Ga2O3 Schottky photodetectors and their response to high temperatures. At room temperature, the dark current is as low as-1.59 x 10-10 A at-10 V bias voltage, the photo-to-dark current ratio ( PDCR ) is more than 5.0 x 103, the responsivity (R) is 27.68 A/W, the external quantum efficiency (EQE) is 13511 %, and the detectivity (D*) is more than 1.56 x 1013 Jones. High temperatures increase dark current and decrease photocurrent due to phonon scattering and thermal excitation, reducing detection efficiency. However, below 125 degrees C, the detector shows fast response times and strong self-powered capabilities, maintaining good performance up to 150 degrees C. The coupling of pyroelectric and photovoltaic effects enhances photoresponse, offering millisecond-level response times and high resolution, making it a promising candidate for energy-efficient flame detectors.

引用

页数：8

共 32 条

[31] Enhancing Carrier Transport and Injection of Ga2O3 Deep-Ultraviolet Schottky Photodiode by Introducing Impurity Energy Level [J].