Heterogeneous Integration of Diamond-on-Chip-on-Interposer for High-Performance Thermal Management in Supercomputing 2.5D Chiplets Packaging

With the advancement of various emerging technologies, the relentless drive for miniaturization and performance enhancement in semiconductor devices has significantly raised power density, presenting formidable thermal challenges. Efficient thermal management has become crucial for the advancement of advanced semiconductor technology, impacting the reliability, performance, and longevity of these devices. This study aims to tackle these thermal challenges by harnessing the superior thermal conductivity of diamond within the 2.5D interposer packaging, which is increasingly vital in high-performance computing and power electronics. We propose an innovative Diamond-Si bonding scheme utilizing a metal nano interlayer and validate its impact on the cooling performance in multi-chiplet, high-compute, and high-power scenarios through thermal simulations. We elaborate on the preparation process for plasma-activated low-temperature bonding samples and evaluate the bonding quality. Additionally, thermal simulations are conducted on multiple chiplets, including a high-performance supercomputing chip and two High Bandwidth Memory (HBM) chips. Thermal modeling shows that integrating a diamond heat spreader reduces the maximum temperature in a realistic 2.5D chiplets packaging by more than 20% with power density higher than 1.5 W/mm(2). This study presents a highly promising strategy for heterogeneous integrated heat dissipation technology, laying the foundation for superior thermal management solutions in advanced chiplet packaging.