A 2-Bit Differential Phase Shifter in 180-nm CMOS with 1.85 dB Insertion Loss for V-band Phased Array Antenna Application

被引:0
|
作者
Sah, Pallav Kumar [1 ]
Mahbub, Ifana [1 ]
机构
[1] Univ Texas Dallas, Dept Elect & Comp Engn, Richardson, TX 75083 USA
基金
美国国家科学基金会;
关键词
Phase shifter (PS); V; -band; phased array antenna; 180nm CMOS; switch-type PS; differential input;
D O I
10.1109/MWSCAS60917.2024.10658744
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper introduces a novel phase shifter (PS) utilizing a standard 180-nm CMOS process, distinguished by its differential 2-bit switch-type design for V-band phased array (PA) application. Due to its switch-type design, this PS exhibits the advantageous characteristic of using no power. The proposed PS utilizes a differential PS unit that incorporates both high-pass and low-pass states to significantly reduce the inductor values achieving a compact dimension of 700 x 750 mu m(2). The floating body terminal transistor-based 2-bit PS has been introduced resulting in the lowest average insertion loss (IL) of < 1.85 dB for the frequency range 57.18-61.92 GHz.
引用
收藏
页码:397 / 400
页数:4
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