共 53 条
Improving the Stability of Lead-Free CsSnBr3 Halide Perovskite by DDAB-Assisted Postpassivation Surface Engineering
被引:6
作者:

Yadav, Anjana
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Banasthali Vidyapith, Dept Phys Sci, Banasthali 304022, Rajasthan, India Banasthali Vidyapith, Dept Phys Sci, Banasthali 304022, Rajasthan, India

Dubey, Charu
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Banasthali Vidyapith, Dept Phys Sci, Banasthali 304022, Rajasthan, India Banasthali Vidyapith, Dept Phys Sci, Banasthali 304022, Rajasthan, India

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Singh, Akhilesh Kumar
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Banasthali Vidyapith, Dept Phys Sci, Banasthali 304022, Rajasthan, India Banasthali Vidyapith, Dept Phys Sci, Banasthali 304022, Rajasthan, India
机构:
[1] Banasthali Vidyapith, Dept Phys Sci, Banasthali 304022, Rajasthan, India
[2] Indian Inst Technol Banaras Hindu Univ, Dept Phys, Varanasi 221005, India
来源:
ACS APPLIED OPTICAL MATERIALS
|
2024年
/
2卷
/
03期
关键词:
lead-free halide perovskites;
optical properties;
CsSnBr3;
photoluminescence;
surfaceengineering;
LIGHT-EMITTING-DIODES;
OPTICAL-PROPERTIES;
SOLAR-CELLS;
TIN;
NANOCRYSTALS;
D O I:
10.1021/acsaom.4c00020
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Lead-based halide perovskites (HPs) have become a center of attention in the field of optoelectronics; however, the toxic nature of lead is a bottleneck in their long-term commercial exploration. The Sn-based HPs are being considered as potential substitutes; however, their poor stability under ambient conditions is a major challenge. To address this, we have attempted postpassivation of CsSnBr3 with didodecyldimethylammonium (DDAB), a biexchange ligand. This ligand replaces the weak surface capping of OAm with DDA(+) and also fills the halide (Br) vacancies on the HP surface, thereby increasing the stability of the lead-free CsSnBr3 HPs. In addition to improved stability, the DDAB-functionalized CsSnBr3 HPs show similar to 5.5 times enhancement in the PL intensity. The DDAB-functionalized CsSnBr3 HPs with shorter chain lengths of DDAB (which might result in improved carrier current), prolonged stability, and improved PL behavior could be a better choice for optoelectronic applications.
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页码:492 / 500
页数:9
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