A C-Band GaN High-Efficiency Power Amplifier with Input Harmonic Control

被引：0
作者：
Shen, Ce [1 ]
机构：
[1] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou, Peoples R China
来源：
2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT | 2024年
关键词：
C-band; power amplifier; input harmonic control; high-efficiency;
D O I：
10.1109/ICMMT61774.2024.10672139
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A C-band power amplifier is designed using GaN HEMT transistor CGH40035F. In order to improve the efficiency, input harmonic control technique is adopted in the design. To achieve greater output power, the drain bias voltage is increased. Under the input power of 37 dBm, the output power is above 47.0 dBm, and the drain efficiency is above 61.2% between 5.7 to 5.9 GHz.
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页数：3
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