Highly Efficient AlGaInP-Based Micro-LEDs Achieved by Plasma Sidewall Treatment

被引：0
作者：
Li, Min-Hua [1 ,2 ]
Zheng, Xi [1 ]
Zhang, Kang [1 ]
Zhong, Chen-Ming [1 ]
Lu, Zhi-Cheng [1 ]
Lu, Yi-Jun [1 ]
Chen, Zhong [1 ]
Guo, Wei-Jie [1 ]
机构：
[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China
[2] Xiamen Changelight Co Ltd, Xiamen 361101, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Plasmas; Plasma temperature; Current density; Argon; Temperature measurement; Light emitting diodes; Radiative recombination; Substrates; Spatial resolution; Thermal stability; AlGaInP; argon plasma; red micro-LEDs; sidewall treatment; LIGHT-EMITTING-DIODES; PERFORMANCE;
D O I：
10.1109/TED.2025.3541621
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The advancement of high-performance AlGaInP-based red micro-light-emitting diodes (micro-LEDs) has been significantly impeded by nonradiative recombination occurring at the sidewall surface, attributed to their extended carrier diffusion length. To address this issue, argon plasma treatment has been employed after dry etching of mesa to suppress the nonradiative recombination at sidewall, demonstrating that the external quantum efficiency (EQE) of micro-LEDs has been improved. The effectiveness of the argon plasma sidewall treatment was assessed through spatially resolved temperature-dependent carrier recombination dynamics.
引用
收藏
页码：1839 / 1843
页数：5
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