Effect of Zr Doping on Structure and Ferroelectric Properties of Nanostructured Barium Titanate

被引:1
作者
Salem, Mohamed M. [1 ]
Altarawneh, Aseel M. [1 ]
Alibwaini, Yamen A. [1 ,2 ]
Ghazy, Ryad [1 ]
Hemeda, Osama M. [1 ]
Zhou, Di [3 ,4 ]
Darwish, Moustafa A. [1 ]
Hossain, M. Khalid [5 ]
Tishkevich, Daria I. [6 ]
Zubar, Tatiana I. [6 ]
Trukhanova, Ekaterina L. [6 ]
Trukhanov, Alex V. [6 ]
Trukhanov, Sergei V. [6 ,7 ]
Mostafa, Maha [1 ]
机构
[1] Tanta Univ, Fac Sci, Phys Dept, Tanta, Egypt
[2] Jadara Univ, Fac Sci & Informat Technol, Irbid, Jordan
[3] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Elect Mat Res Lab, Key Lab Minist Educ, Xian, Peoples R China
[4] Xi An Jiao Tong Univ, Int Centerfor Dielect Res, Xian, Peoples R China
[5] Bangladesh Atom Energy Commiss, Inst Elect Atom Energy Res Estab, Dhaka, Bangladesh
[6] SSPA Sci & Pract Mat Res Ctr NAS Belarus, Lab Magnet Films Phys, Minsk, BELARUS
[7] Natl Univ Sci & Technol MISiS, Dept Elect Mat Technol, Smart Sensors Lab, Moscow, Russia
来源
NANO SELECT | 2024年
关键词
doped titanates; ferroelectrics; perovskites; piezoelectrics; soft chemistry methods; GRAIN-SIZE; PIEZOELECTRIC PROPERTIES; BAZRXTI1-XO3;
D O I
10.1002/nano.202300173
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using soft chemistry methods, solid solutions of BaTi1-xZrxO3 with 0 <= x <= 1 were obtained. The phase nature and features of the perovskite crystalline structure were established by x-ray analysis and Fourier transform infrared (FTIR) spectroscopy. It was found that the average particle size increases with increasing content of zirconium cations. The average size of the crystallites, which are mostly irregular in shape and closely connected, is similar to 43 nm. The d33 piezoelectric coefficient decreases while the concentration of zirconium cations increases. It is interesting to note that the residual polarization very strongly depends on the average crystallite size and, on the contrary, increases with increasing concentration of zirconium cations. The discovered behavior can be used in the design and production of electrostatic read-only memory devices.
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页数:13
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