Enhanced and modulated-2.9 μm mid-infrared emission of Ho3+/Pr3+: LiYF4 single crystal by co-doping non active Lu3+ ions

被引:0
作者
Shi, Yi [1 ]
Fang, Lizhi [2 ]
Xia, Haiping [1 ]
Song, Hongwei [3 ,4 ]
Chen, Baojiu [5 ]
机构
[1] Ningbo Univ, Key Lab Photoelect Mat, Ningbo 315211, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab Funct Crystals & Devices, Shanghai 201899, Peoples R China
[3] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China
[4] Jilin Univ, Coll Phys, Changchun 130012, Jilin, Peoples R China
[5] Dalian Maritime Univ, Dept Phys, Dalian 116026, Liaoning, Peoples R China
基金
中国国家自然科学基金;
关键词
Pr (3+) /Ho3+ /Lu3+ ions; 2.9 mu m emission; Energy transfer; Ho3+-Ho3+] quench cluster; ENERGY-TRANSFER; GROWTH; LASER; HO3+; PHOSPHORS; SPECTRA;
D O I
10.1016/j.optmat.2025.117008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A hitherto undeveloped Pr3+/Ho3+: LiYF4 single crystal by introducing non-active Lu3+ ions was synthesized by a reformative Bridgman technique. The crystalline phases and optical properties of the crystals were characterized using various methods, including absorption spectra, X-ray diffraction (XRD), Rietveld refinement, emission spectra, and lifetimes. The band gaps of Ho3+/Pr3+: LiYF4 (Ho3+/Pr3+: LYF) and Ho3+/Pr3+/Lu3+: LiYF4 (Ho3+/ Pr3+: LLYF) single crystal were calculated by density functional theory, the value is-7.902 eV and-7.692 eV, respectively. The-2.9 mu m emission intensity significantly increased about two times when Lu3+ (3.0 mol%) was added to 0.1Pr3+/0.5Ho3+: LiYF4single crystal due to the disruption of [Ho3+-Ho3+] quenching clusters formed by Ho3+ ions. The maximum emission cross section of 0.1Pr3+/0.5Ho3/3.0Lu3+: LiYF4 single crystal was-22.7 x 10-21 cm2. The doping of Lu3+ ions reduced significantly the lifetime of 5I7 energy level and mitigates effectively the self-termination phenomenon. Thus, the incorporation of Pr3+/Ho3+/Lu3+ into LiYF4 single crystal represented a promising choice for a laser gain medium operating at-2.9 mu m, as well as for other optoelectronic devices.
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页数:11
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