Current balancing of parallel-connected silicon carbide (SiC) MOSFET power devices using peak detection via PCB sensors

被引：0
|
作者：
Tripathi, Ravi Nath [1 ]
Omura, Ichiro [1 ,2 ]
机构：
[1] Kyushu Inst Technol, Next Generat Power Elect Res Ctr, Kitakyushu, Japan
[2] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Kitakyushu, Japan
来源：
MICROELECTRONICS RELIABILITY | 2025年 / 168卷
基金：
日本学术振兴会;
关键词：
D O I：
10.1016/j.microrel.2025.115688
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The parallelling of power semiconductor devices is essential for desired current ratings and the system is prone to the current unbalancing due to parameter variations. SiC devices with significant variable threshold voltage due to manufacturing yield and temperature distribution have a consequential possibility of dynamic current unbalancing. This paper presents the peak detection-based current balancing of parallel-connected SiC devices to minimize the turn-on and turn-off current unbalancing. PCB current sensors are used for the measurement and feedback of the signal for this peak detection-based current balancing mechanism.
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页数：5
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