Harmonization of heterointerface states to enhance built-in electric field effects for electromagnetic wave absorption

被引:0
|
作者
Zhu, Hongbao [1 ]
Yan, Yi [1 ]
Zhou, Jintang [1 ]
Tao, Jiaqi [1 ]
Zou, Kexin [1 ]
Cheng, Zhenyu [1 ]
Yao, Zhengjun [1 ]
Tao, Xuewei [2 ]
Lei, Yiming [3 ]
Ma, Yao [4 ]
Liu, Peijiang [5 ]
Huang, Hexia [6 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Minist Ind & Informat Technol, Nanjing 211100, Peoples R China
[2] Nanjing Inst Technol, Jiangsu Key Lab Adv Struct Mat & Applicat Technol, Nanjing 210008, Peoples R China
[3] Ningbo Univ, Key Lab Impact & Safety Engn, Minist Educ China, Ningbo 315000, Peoples R China
[4] Army Engn Univ, Natl Key Lab Electromagnet Environm Effects & Elec, Nanjing 210007, Peoples R China
[5] Minist Ind & Informat Technol, Elect Res Inst 5, Sci & Technol Reliabil Phys & Applicat Technol Ele, Guangzhou 511370, Guangdong, Peoples R China
[6] Nanjing Univ Aeronaut & Astronaut, Coll Energy & Power Engn, Nanjing 210016, Peoples R China
来源
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2025年 / 229卷
基金
中国国家自然科学基金;
关键词
Electromagnetic wave absorption; Heterointerface; Built-in electric field; Polarization loss; Interface state; MICROWAVE-ABSORPTION; COMPOSITES;
D O I
10.1016/j.jmst.2024.12.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Heterointerface engineering based on built-in electric field (BIEF) has been well-received in electromagnetic wave (EMW) absorption. However, the influence of interface size and number of interfaces on the BIEF and interface polarization loss mechanism remains unclear. Here, we designed a ternary dual heterointerfaces Co@C/SiO2 nanocomposite. Experimental and theoretical analyses show that Co@C/SiO2 has abundant Mott-Schottky heterointerfaces, and a reasonable increase in the heterointerface area leads to a strong BIEF effect, where the charge accumulates at the interface and subsequently migrates along the direction of the alternating electromagnetic field to promote the dissipation of EMW by polarization loss. However, an excessive number of interfaces leads to many carriers being bound by the interfaces, which is not conducive to forming electron channels. By coordinating the heterointerface states to achieve optimal EMW absorption performance, SZ-3 can accomplish an effective absorption width (EAB) of 5.93 GHz at a thickness of 1.91 mm. This work provides new ideas and methods for BIEF-based heterointerface engineering applied to EMW absorption materials. (c) 2025 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码:223 / 234
页数:12
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