Analysis of single event transient impact in Si/Si-Ge Gate-All-Around nanowire FET using TCAD

The increasing need for high-performance and reliable semiconductor devices in radiation-prone environments requires a thorough understanding of Single-Event-Transient effects. This work examines the Single Event Transient responses of Silicon and Silicon-Germanium Gate-All-Around Nanowire Field-Effect (GAA-NWFET) Transistors using Technology Computer-Aided Design simulations. Furthermore, we determine the device's sensitive location, detecting charge collection, and amplifying bipolar transients under various Linear Energy Transfer (LET) values. The main objective is to enhance performance of a transient response characteristics by optimizing the key parameters such as LET, biasing conditions and dielectric oxide thickness. This investigation presents significant insights into designing more robust and efficient Si-Ge GAA-NWFET device for space and high-radiation conditions, highlighting Si-Ge as potential alternative to silicon.