Inhibition of Anti-Reflection Film Cracks on Plastic Substrates Using Nanolaminate Layer Deposition in Plasma-Enhanced Atomic Layer Deposition

被引:0
作者
Wang, Chi-Chieh [1 ]
Wang, Cheng-Fu [1 ]
Li, Meng-Chi [2 ,3 ]
Su, Li-Chen [2 ,3 ]
Kuo, Chien-Cheng [1 ]
机构
[1] Natl Cent Univ, Thin Film Technol Ctr, Dept Opt & Photon, Taoyuan 32001, Taiwan
[2] Ming Chi Univ Technol, Gen Educ Ctr, New Taipei City 24301, Taiwan
[3] Ming Chi Univ Technol, Organ Elect Res Ctr, New Taipei City 24301, Taiwan
关键词
nanolaminates; PEALD; crystallization; surface roughness; ductility; hafnium dioxide; aluminum oxide; silicon dioxide; SCALE-DEPENDENT DEFORMATION; OPTICAL-PROPERTIES; BEHAVIOR; MULTILAYERS; HFO2;
D O I
10.3390/technologies13010011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this research, we mainly increase the adhesion of PMMA substrate and film, which is reflected in the environmental test. This study used plasma-enhanced atomic layer deposition (PEALD) to find the relationship between the intensity of XRD reflection peak and the root-mean-square surface roughness (sigma RMS) of hafnium dioxide (HfO2) at different thicknesses by reducing the plasma power at different process temperatures. In this experiment, HfO2 was found to have the highest intensity of XRD at its maximum thickness. According to the different intensities of XRD of HfO2 at different thicknesses, aluminum oxide (Al2O3) was inserted as crystallization cutoff layers, and the two materials were combined into nanolaminates. The corresponding sigma RMS value also changed from 1.25 to 0.434 nm after treatment under the fourth experimental design. This study improved this mismatch between interfaces by adjusting the yield strength and ductility using Al2O3 layers and by creating an inhibition layer. In addition, through the processing of inserted Al2O3 layers, the degree of crystallization was changed so that the material and substrate could maintain their normal surfaces without cracking after the environmental tests. After inserting five 1 nm thick Al2O3 layers, the environmental test results were improved. The test time was increased from the original 56 h to 352 h.
引用
收藏
页数:14
相关论文
共 26 条
  • [1] Aitchison B., 2017, P FTH3B5, DOI [10.1364/IODC.2017.ITu2A.3, DOI 10.1364/IODC.2017.ITU2A.3]
  • [2] Ultra-low thermal conductivity in W/Al2O3 nanolaminates
    Costescu, RM
    Cahill, DG
    Fabreguette, FH
    Sechrist, ZA
    George, SM
    [J]. SCIENCE, 2004, 303 (5660) : 989 - 990
  • [3] Topographic reconstruction and mechanical analysis of atomic layer deposited Al2O3/TiO2 nanolaminates by nanoindentation
    Coy, Emerson
    Yate, Luis
    Kabacinska, Zuzanna
    Jancelewicz, Mariusz
    Jurga, Stefan
    Iatsunskyi, Igor
    [J]. MATERIALS & DESIGN, 2016, 111 : 584 - 591
  • [4] Characterisation of nanolayered aluminium/palladium thin films using nanoindentation
    Dayal, P.
    Savvides, N.
    Hoffman, M.
    [J]. THIN SOLID FILMS, 2009, 517 (13) : 3698 - 3703
  • [5] Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
    Heil, S. B. S.
    van Hemmen, J. L.
    Hodson, C. J.
    Singh, N.
    Klootwijk, J. H.
    Roozeboom, F.
    de Sanden, M. C. M. van
    Kessels, W. M. M.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (05): : 1357 - 1366
  • [6] Study on Structural, Mechanical, and Optical Properties of Al2O3-TiO2 Nanolaminates Prepared by Atomic Layer Deposition
    Iatsunskyi, Igor
    Coy, Emerson
    Viter, Roman
    Nowaczyk, Grzegorz
    Jancelewicz, Mariusz
    Baleviciute, Ieva
    Zaleski, Karol
    Jurga, Stefan
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (35) : 20591 - 20599
  • [7] Jain N.K., 2016, Encyclopedia of Plasma Technology, P722
  • [8] Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films
    Jung, Hanearl
    Oh, Il-Kwon
    Yoon, Chang Mo
    Park, Bo-Eun
    Lee, Sanghun
    Kwon, Ohyung
    Lee, Woo Jae
    Kwon, Se-Hun
    Kim, Woo-Hee
    Kim, Hyungjun
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (46) : 40286 - 40293
  • [9] Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition
    Kim, Kyoung-Mun
    Jang, Jin Sub
    Yoon, Soon-Gil
    Yun, Ju-Young
    Chung, Nak-Kwan
    [J]. MATERIALS, 2020, 13 (09)
  • [10] Highly-impermeable Al2O3/HfO2 moisture barrier films grown by lowtemperature plasma-enhanced atomic layer deposition
    Kim, Lae Ho
    Jang, Jin Hyuk
    Jeong, Yong Jin
    Kim, Kyunghun
    Baek, Yonghwa
    Kwon, Hyeok-jin
    An, Tae Kyu
    Nam, Sooji
    Kim, Se Hyun
    Jang, Jaeyoung
    Park, Chan Eon
    [J]. ORGANIC ELECTRONICS, 2017, 50 : 296 - 303