Design and characteristics analysis of a biosensor based on electrostatic doped heterostructure nanotube TFET with optimized structure

This manuscript presents an optimized electrostatically doped vertical nanotube TFET with an InGaAs/InP heterojunction on an SOI wafer. Featuring a 40 nm design with a nano-cavity near the source, it enhances tunneling efficiency and biomolecular sensing. Silvaco Atlas TCAD simulations reveal significant improvements in drain current (ID approximate to 10-5 A) and sensitivity. Variations in dielectric constants and charge densities highlight the device's tunable electric field and energy band behavior. Nanocavity engineering with biomolecule fillings optimizes specificity, demonstrating high adaptability and superior sensitivity, leading to enhanced electrostatic control over channel, thus increasing gate-induced electric field penetration modulating energy band bending for biosensing.