Decoupled Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Low Reverse Conduction Loss and High Forward Threshold Voltage

被引：0
|
作者：
Tang, Xiaotian [1 ,2 ]
Ji, Zhongchen [1 ,2 ]
Jiang, Qimeng [1 ,2 ]
Huang, Sen [1 ,2 ]
Gao, Xinguo [1 ,2 ]
Wei, Ke [1 ,2 ]
Wang, Xinhua [1 ,2 ]
Liu, Xinyu [1 ,2 ]
机构：
[1] Chinese Acad Sci, High Frequency High Voltage Device & Integrated Ci, Inst Microelect, Beijing, Peoples R China
[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2025年 / 46卷 / 02期
基金：
中国国家自然科学基金;
关键词：
HEMTs; Wide band gap semiconductors; Logic gates; Aluminum gallium nitride; Threshold voltage; Schottky diodes; Schottky barriers; Ohmic contacts; Electron devices; Transistors; Double-channel; p-GaN gate HEMT; hybrid-source; Schottky barrier diode (SBD); reverse conduction;
D O I：
10.1109/LED.2024.3513322
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between the p-GaN gate and double-channel structures by decoupling the upper and lower channels through a Hybrid-Source structure. Thanks to the source-side Schottky connection to the lower channel, an extremely low reverse turn-ON voltage (-0.5 V) and a large forward threshold voltage (+3.2 V) are simultaneously achieved.
引用
收藏
页码：147 / 150
页数：4
相关论文
共 38 条
  • [31] Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization-induced charges
    Bin Kashem, Md Tashfiq
    Subrina, Samia
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2019, 32 (01)
  • [32] High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss
    Zhao, Zhijia
    Wei, Yuxi
    Sun, Tao
    Yang, Kemeng
    Wei, Jie
    Jia, Yanjiang
    Deng, Siyu
    Luo, Xiaorong
    Zhang, Bo
    MICROELECTRONICS JOURNAL, 2023, 136
  • [33] Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor
    Chen, Xin
    Zhong, Yaozong
    Zhou, Yu
    Su, Shuai
    Yan, Shumeng
    Guo, Xiaolu
    Gao, Hongwei
    Zhan, Xiaoning
    Ouyang, Sihua
    Zhang, Zihui
    Bi, Wengang
    Sun, Qian
    Yang, Hui
    APPLIED PHYSICS LETTERS, 2021, 119 (06)
  • [34] 700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode
    Zhang, Li
    Wei, Jin
    Zheng, Zheyang
    Song, Wenjie
    Yang, Song
    Fcng, Sirui
    Chen, Kevin J.
    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 521 - 524
  • [35] Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density
    Su, Huake
    Zhang, Tao
    Xu, Shengrui
    Tao, Hongchang
    Zhang, Jincheng
    Hao, Yue
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (12) : 1939 - 1942
  • [36] High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
    Huang, Yu-Chun
    Chiu, Hsien-Chin
    Kao, Hsuan-Ling
    Wang, Hsiang-Chun
    Liu, Chia-Hao
    Huang, Chong-Rong
    Chen, Si-Wen
    MICROMACHINES, 2021, 12 (05)
  • [37] A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
    Chu, CS
    Zhou, Y
    Chen, KJ
    Lau, KM
    2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers, 2005, : 385 - 388
  • [38] A Threshold-Voltage and Drain-Source Current Model for Double-Channel AlxGa1-xN/GaN/AlyGa1-yN/GaN High-Electron-Mobility Transistors
    Cai, Jing
    Yao, Ruo-He
    Liu, Yu-Rong
    Geng, Kui-Wei
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (23):
1234