Decoupled Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Low Reverse Conduction Loss and High Forward Threshold Voltage

被引：0
|
作者：
Tang, Xiaotian [1 ,2 ]
Ji, Zhongchen [1 ,2 ]
Jiang, Qimeng [1 ,2 ]
Huang, Sen [1 ,2 ]
Gao, Xinguo [1 ,2 ]
Wei, Ke [1 ,2 ]
Wang, Xinhua [1 ,2 ]
Liu, Xinyu [1 ,2 ]
机构：
[1] Chinese Acad Sci, High Frequency High Voltage Device & Integrated Ci, Inst Microelect, Beijing, Peoples R China
[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2025年 / 46卷 / 02期
基金：
中国国家自然科学基金;
关键词：
HEMTs; Wide band gap semiconductors; Logic gates; Aluminum gallium nitride; Threshold voltage; Schottky diodes; Schottky barriers; Ohmic contacts; Electron devices; Transistors; Double-channel; p-GaN gate HEMT; hybrid-source; Schottky barrier diode (SBD); reverse conduction;
D O I：
10.1109/LED.2024.3513322
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between the p-GaN gate and double-channel structures by decoupling the upper and lower channels through a Hybrid-Source structure. Thanks to the source-side Schottky connection to the lower channel, an extremely low reverse turn-ON voltage (-0.5 V) and a large forward threshold voltage (+3.2 V) are simultaneously achieved.
引用
收藏
页码：147 / 150
页数：4
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