Room-Temperature WSe2 Impact Ionization Field-Effect Transistor Based on a Stepwise Homojunction

被引：0

作者：

Chen, Yue ^{[1
,2
]}

Wei, Wenrui ^{[1
,2
]}

Wang, Hailu ^{[1
,2
]}

Bai, Yuzhuo ^{[1
,2
]}

Zhang, Tao ^{[1
,2
]}

Zhang, Kun ^{[1
,2
]}

Duan, Shikun ^{[1
,2
]}

Yu, Yiye ^{[1
]}

Zhao, Tiange ^{[1
,2
]}

Xie, Runzhang ^{[1
,2
]}

Wang, Peng ^{[1
,2
]}

Martyniuk, Piotr ^{[3
]}

Wang, Zhen ^{[1
,2
]}

Hu, Weida ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego St, PL-00908 Warsaw, Poland

来源：

SMALL | 2025年

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

avalanche breakdown; homojunction; impact ionization; subthreshold swing; van der waals materials;

D O I：

10.1002/smll.202412466

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The low subthreshold swing (SS) below the Boltzmann thermionic limitation (60 mV dec(-1)) is crucial for the development of power-efficient transistors. Recently, impact ionization field-effect transistors (II-FETs), which leverage carrier avalanche multiplication, have emerged as an attractive method for achieving ultra-steep SS, high on-state current density, and significant drain current on-off ratio. However, current II-FETs face challenges due to complex fabrication processes, hindering the development of future array devices. In this work, a novel II-FET is reported based on a stepwise van der Waals WSe2 homojunction. The device exhibits a low SS of 3.09 mV dec(-1) and a high multiplication factor exceeding 10(4) at room temperature. Additionally, by lowering the operating temperature, the SS can be further improved to 0.25 mV dec(-1). Along with the improved subthreshold characteristics, the device shows a current on/off ratio >10(5) and an on-state current density of similar to 1 mu A mu m(-1). The findings presented here offer a promising approach to developing energy-efficient electronic devices for future technological generations.

引用

页数：7