Semiconductor Physics and Characteristics of Tunable Negative Electron Affinity Photocathode with High Quantum Efficiency

被引:0
|
作者
Priyoti, Anika Tabassum [1 ]
Ahsan, Ragib [1 ]
Chae, Hyun Uk [1 ]
Vazquez, Juan Sanchez [1 ]
Kapadia, Rehan [1 ]
机构
[1] Univ Southern Calif, Ming Hsieh Dept Elect & Comp Engn, Los Angeles, CA 90089 USA
来源
2024 JOINT INTERNATIONAL VACUUM ELECTRONICS CONFERENCE AND INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE, IVEC + IVESC 2024 | 2024年
关键词
Hot electron; Fowler-Nordheim tunneling; Graphene; Palladium;
D O I
10.1109/IVECIVESC60838.2024.10694892
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Negative electron affinity (NEA) photocathodes have long been pursued as an efficient electron source due to their enhanced quantum efficiency, narrow energy spread and high brightness or current density. Conventionally, NEA is achieved by applying a thin layer of cesium-rich oxide onto a semiconductor surface, rendering it highly reactive, unstable, and susceptible to environmental conditions [1]. In a recent investigation focused on electrostatically generated tunable NEA surface [2], an NEA photocathode is explored that exhibits remarkable stability in ambient conditions and allows for electronic tuning of its electron affinity. The present work discusses an enhanced iteration of this device, characterized by improved quantum efficiency and reliability.
引用
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页数:2
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