Study on Repetitive-Frequency Gas Switch Triggered by Photoconductive Semiconductor Switch

This article presents the research on repetitive-frequency V/N-type gas switch triggered by high-voltage photoconductive semiconductor switch (PCSS). The working states of V/N-type gas switch in three cases are analyzed theoretically. At underdamping case, the V/N-type gas switch has a shorter trigger delay and a large overvoltage, with a larger triggering current. While at critical-damping case and overdamping case, it has a longer trigger delay and a smaller overvoltage, with a smaller triggering current. Simulations of the working states of the V/N-type switches in three cases were carried out, and the simulation results were consistent with the theoretical results. A V/N-type gas switch triggered by PCSS at the underdamping case was designed. The experimental result of the switch showed that the switch working at the mode of 50 Hz/70 kV/1000 pulses had a trigger delay jitter of 988.7 ps, corresponding operating coefficient of 0.7. After 60 000 pulses, there was a continuous breakdown chain, which connected the electrodes of the PCSS. The damage leading to the breakdown occurred after the close stage of the PCSS, including the damage caused by large conduction current and the damage caused by the energy releasing from the reversal inductor during the insulation recovery of PCSS.